Method for etching damaged zones on an edge of a semiconductor substrate, and etching system
Patent 5945351 Issued on August 31, 1999. Estimated Expiration Date: 
June 2, 2017. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
June 2, 2017. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMethod for etching semiconductor wafers on one side Patent #: 4350562 InventorAssigneeApplicationNo. 867115 filed on 06/02/1997US Classes:438/706, Vapor phase etching (i.e., dry etching)257/E21.218, Plasma etching; reactive-ion etching (EPO)257/E21.219, Chemical etching (EPO)438/710, By creating electric field (e.g., plasma, glow discharge, etc.)438/715, With substrate heating or cooling438/726, Having microwave gas energizing438/727, Producing energized gas remotely located from substrate438/731, Using intervening shield structure438/745Liquid phase etchingExaminersPrimary: Dang, ThiAssistant: Olsen, Allan Attorney, Agent or FirmForeign Patent References
International ClassH01L 029/30Foreign Application Priority Data1996-05-31 DEAbstractThe apparatus and method of the invention allow etching of the edge of a semiconductor substrate even where no resist is applied to the front side and back side of the semiconductor substrate. The semiconductor substrate is introduced into a protective chamber within an evacuatable process chamber. The front side and the back side of the semiconductor substrate are covered by the protective chamber except for the edge of the semiconductor substrate to be etched. The edge of the semiconductor substrate is then exposed to an etching agent. Etching products and excess etching agent are removed.Other References
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