Composite substrate carrier for high power electronic devices
May 6, 2017. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMethod of making metal matrix composites Directional solidification of metal matrix composites Circuit substrate comprising nitride type ceramics, method for preparing it, and metallizing composition for use in it Composite heat transfer device Process for the manufacture of a refractory composite material protected against corrosion Metal matrix composite heat transfer device and method Electronic device including a passive electronic component Porous load bearing materials Apparatus for cooling of chips using a plurality of customized thermally conductive materials Heat sink assembly and method of affixing the same to electronic devices InventorsApplicationNo. 852025 filed on 05/06/1997US Classes:165/185, HEAT TRANSMITTER164/6, Shaping a forming surface (e.g., mold making, etc.)164/97, Incorporating particulate material165/80.2, Electrical component165/80.3, Air cooled, including fins257/720, Heat dissipating element has high thermal conductivity insert (e.g., copper slug in aluminum heat sink)257/E23.111, Diamond (EPO)257/E23.112, Having heterogeneous or anisotropic structure, e.g., powder or fibers in matrix, wire mesh, porous structures (EPO)428/209Including metal layerExaminersPrimary: Lazarus, Ira S.Assistant: McKinnon, Terrell International ClassF28F 007/00AbstractA substrate carrier for a ceramic substrate which supports one or more high power semiconductor devices which is fabricated from a metal base composite and which includes strategically located high conductivity copper based inserts to provide an effective heat transfer path to a heat sink for high power electronic devices. The coefficient of thermal expansion of both the metal based composite and the copper based inserts substantially match that of the substrate. The substrate carrier is formed by a pressure casting process where a porous preform of SiC, for example, is infiltrated with molten aluminum. | |
