Method for sputtering compounds on a substrate

Patent 5942089 Issued on August 24, 1999. Estimated Expiration Date:

April 22, 2016. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Abstract Claims Description Full Text

Patent References

Rapid rate reactive sputtering of a group IVb metal
Patent #: 4428811
Issued on: 01/31/1984
Inventor: Sproul , et al.

Sputtering process and an apparatus for carrying out the same
Patent #: 4963239
Issued on: 10/16/1990
Inventor: Shimamura, et al.

Low frequency, pulsed, bipolar power supply for a plasma chamber
Patent #: 5303139
Issued on: 04/12/1994
Inventor: Mark

Method for self-stabilizing deposition of a stoichiometric compound by reactive sputtering
Patent #: 5492606
Issued on: 02/20/1996
Inventor: Stauder, et al.

Method for controlling a reactive sputtering process Patent #: 5556520
Issued on: 09/17/1996
Inventor: Latz

Inventors

Assignee

Northwestern University

Application

No. 635472 filed on 04/22/1996

US Classes:

204/192.13, Measuring or testing (e.g., of operating parameters, property of article, etc.)204/192.15, Specified deposition material or use204/192.16, Wear or abrasion resistant204/192.22, Insulator or dielectric204/192.23, Silicon containing204/192.25, Semiconductor204/298.03, Measuring, analyzing or testing204/298.06, Triode, tetrode, auxiliary electrode or biased workpiece204/298.07, Specified gas feed or withdrawal204/298.08, Specified power supply or matching network204/298.14Specified anode particulars

Examiners

Primary: Nguyen, Nam
Assistant: McDonald, Rodney G.

Attorney, Agent or Firm

Banner & Witcoff, Ltd.

Foreign Patent References

0 564 789 EP. 10/24/1993

International Classes

C23C 014/34
298.06
192.16

Abstract

A method and apparatus for monitoring and controlling deposition of metal, insulating compounds or other compounds on a substrate by sputtering techniques includes maintaining pulsed, constant, direct current power to the target, sensing the voltage of the target material used in the process, simultaneously rapidly sensing the partial pressure of the reactive gas, and simultaneously biasing the substrate to activate the reactive gas or otherwise energizing the reactive gas in the vicinity of the substrate. An apparatus for practicing the invention is also disclosed.

Other References

Sellers, "Asymmetric Bipolar Pulsed DC--The Enabling Technology for Reactive PVD", ENI Tech Note, pp. 1-8, Feb. 1996
William D. Sproul, HIgh Rate Reactive Sputtering Process Control, Surface and Coatings Technology, 33 (1987) 73-81
William D. Sproul and Paul J. Rudnik, The Effect of Target Power on the Nitrogen Partial Pressure Level and Hardness of Reactively Sputtered Titanium Nitride Coatings, Thin Solid Films, 171 (1989) 171-181
W. D. Sproul and P. J. Rudnik, Advances in Partial-Pressure Control Applied to Reactive Sputtering, Surface and Coatings Technology, 39/40 (1989) 499-506
W. D. Sproul, P. J. Rudnik and M. E. Graham, The Effect of N₂ Partial Pressure, Deposition Rate and Substrate Bias Potential on the Hardness and Texture of Reactively Sputtered TiN Coatings, Surface and Coatings Technology, 39/40 (1989) 355-363
X. Chu, M.S. Wong, W. D. Sproul, S. L. Rohde and S. A. Barnett, Deposition and Properties of Polycrystalline TiN/NbN Superlattice Coatings, J. Vac Sci. Technol. A 10(4), Jul./Aug. 1992
William D. Sproul, Control of A Reactive Sputtering Process For Large Systems, Presented at the Society of Vacuum Coaters 36th Annual Technical Conference, Dallas, Texas, Apr. 30, 1993
J. Affinito and R. R. Parsons, Mechanisms of Voltage Controlled, Reactive, Planar Magnetron Sputtering of Al in Ar/N₂ and AR/O₂ Atmospheres, J. Vac. Sci. Technol. A 2(3), Jul.-Sep. 1984
S. Schiller, K. Goedicke, J. Reschke, V. Kirchhoff, S. Schneider and F. Milde, Pulsed Magnetron Sputter Technology, Surface and Coatings Technology, 61 (1993) 331-337
P. Frach, U. Heisig, Chr. Gottfried and H. Walde, Aspects and Results of Long-Term Stable Deposition of Al₂ O₃ With High Rate Pulsed Reactive Magnetron Sputtering, Surface and Coatings Technology, 59 (1993) 177-182
W. D. Sproul, M. E. Graham, M. S. Wong, S. Lopez, and D. Li, Reactive Direct Current Magnetron Sputtering of Aluminum Oxide Coatings. J. Vac. Sci. Technol. A 13(3), May/Jun. 1995
William D. Sproul, Michael E. Graham, Ming-Show and Paul J. Rudnik, Reactive DC Magnetron Sputtering of the Oxides of Ti, Zr, and Hf, Presented at the International Conference on Metallurgical Coatings and Thin Films, Town and Country Hotel, San Diego, California, Apr. 24-28, 1994 and Submitted for publication in Surface and Coatings Technolog