U.S. patents available from 1976 to present.
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Inspection method, inspection apparatus and method of production of semiconductor device using them

Patent 5936726 Issued on August 10, 1999. Estimated Expiration Date: Icon_subject September 9, 2017. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

Surface analysis system and method Patent #: 4893932
Issued on: 01/16/1990
Inventor: Knollenberg

Inventors

Assignee

Application

No. 913392 filed on 09/09/1997

US Classes:

356/237.2, Surface condition356/237.3, Detection of object or particle on surface356/237.4, On patterned or topographical surface (e.g., wafer, mask, circuit board)356/237.5On patterned or topographical surface (e.g., wafer, mask, circuit board)

Examiners

Primary: Kim, Robert H.
Assistant: Merlino, Amanda

Attorney, Agent or Firm

Foreign Patent References

  • 62-73141 JP. 04/13/1987
  • 2-61540 JP. 03/13/1990
  • 5-264468 JP. 10/13/1993
  • 5-332913 JP. 12/13/1993
  • 5-340884 JP. 12/13/1993

International Class

G01N 021/00

Abstract

An inspection method and apparatus for discriminating the foreign particles on the surface of a sample from the foreign particles or defects within the sample, and a semiconductor-device producing method using the inspection method and apparatus. The inspection apparatus includes a light source, a first optical system that causes the light from the source to be directed to the sample, a second optical system for condensing the light coming back from the sample, a polarizing prism for separating the condensed light into polarized components, and optical detectors, for detecting the polarized components. The two optical systems, are arranged for their optical axes to make an angle of 50° to 120° relative to each other. The foreign particles on the surface of the sample and the foreign particles or defects within the sample are respectively discriminated from each other as side scattered light and backward scattered light by utilizing the difference between the intensity ratios of the polarized light components.

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