U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Gate drive circuit for power converters that reduces surge voltages

Patent 5936387 Issued on August 10, 1999. Estimated Expiration Date: Icon_subject October 16, 2017. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

Dual-mode amplifier
Patent #: 4288738
Issued on: 09/08/1981
Inventor: Rogers ,   et al.

Semiconductor module
Patent #: 4796145
Issued on: 01/03/1989
Inventor: Oshikiri

Solid state power controller
Patent #: 4864214
Issued on: 09/05/1989
Inventor: Billings ,   et al.

High-frequency heating apparatus including ringing effect suppressor for switching element
Patent #: 5204504
Issued on: 04/20/1993
Inventor: Tanaka

Synchronously rectified buck-flyback DC to DC power converter
Patent #: 5552695
Issued on: 09/03/1996
Inventor: Schwartz

DC-to-DC converter having hysteretic current limiting Patent #: 5808455
Issued on: 09/15/1998
Inventor: Schwartz, et al.

Inventors

Assignee

Application

No. 951228 filed on 10/16/1997

US Classes:

323/225, Plural devices323/271, Switched (e.g., on-off control)323/289, With base drive control dissipation363/56.11Having voltage protection

Examiners

Primary: Sterrett, Jeffrey

Attorney, Agent or Firm

International Class

G05F 003/16

Foreign Application Priority Data

1996-10-17 JP

Abstract

A current detector includes a chopper circuit composed of a switching circuit, i.e. an inverse-parallel circuit composed of an insulated gate bipolar transistor IGBT and a diode, and a switching circuit, i.e. an inverse-parallel circuit composed of an IGBT and a diode, which are connected in series. When the diode on the opposite arm is turned on, a reverse recovery current is detected and its output is directed to a gate drive circuit via an insulating circuit. A switch in the gate drive circuit is opened to increase resistance, in order to reduce the speed at which the gate of the switching device is charged. Thus, the surge voltage and its increase ratio are reduced without reducing a switching speed or requiring a snubber circuit.

Other References

  • A Study on Soft-Switching Gate Drive for IGBTS, Hideki Miyazaki, Kazuo Kato (Hitachi Ltd.), pp. 289-292, Sep. 1997
  • A New Driving Circuit for IGBT Devices, IEEE Transactions on Power Electronics, vol., 10, No. 3, May 1995, pp. 373-37
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