Sequential chemical vapor deposition
Patent 5916365 Issued on June 29, 1999. Estimated Expiration Date: 
August 16, 2016. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
August 16, 2016. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMethod for producing compound thin films Apparatus for performing growth of compound thin films Preparation process of compound semiconductor Doping III-V compound semiconductor devices with group VI monolayers using ALE Group VI doping of III-V semiconductors during ALE Method of growing GaAs films on Si or GaAs substrates using ale Apparatus for atomic layer epitaxial growth Via filling by selective laser chemical vapor deposition Method for chemical vapor deposition under a single reactor vessel divided into separate reaction chambers each with its own depositing and exhausting means Hetero-epitaxially grown compound semiconductor substrate and a method of growing the same InventorApplicationNo. 699002 filed on 08/16/1996US Classes:117/92, Using an energy beam or field, a particle beam or field, or a plasma (e.g., ionization, PECVD, CBE, MOMBE, RF induction, laser)117/93With significant flow manipulation or condition, other than merely specifying the components or their sequence or bothExaminersPrimary: Breneman, R. BruceAssistant: Powell, Alva C Attorney, Agent or FirmInternational ClassC30B 025/14AbstractThe present invention provides for sequential chemical vapor deposition by employing a reactor operated at low pressure, a pump to remove excess reactants, and a line to introduce gas into the reactor through a valve. A first reactant forms a monolayer on the part to be coated, while the second reactant passes through a radical generator which partially decomposes or activates the second reactant into a gaseous radical before it impinges on the monolayer. This second reactant does not necessarily form a monolayer but is available to react with the monolayer. A pump removes the excess second reactant and reaction products completing the process cycle. The process cycle can be repeated to grow the desired thickness of film.Other References
Field of SearchWith decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., CVD)Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing) Using an energy beam or field, a particle beam or field, or a plasma (e.g., ionization, PECVD, CBE, MOMBE, RF induction, laser) Using an energy beam or field, a particle beam or field, or a plasma (e.g., ionization, PECVD, CBE, MOMBE, RF induction, laser) Using an organic precursor (e.g., propane, metal-organic, MOCVD, MOVPE) Halide containing (e.g., fluorphlogopite, fluor-mica) {C30B 29/12} Aluminum containing (e.g., AL2O3, ruby, corundum, sapphire, chrysoberyl) {C30B 29/20} Nitride containing (e.g., GaN, cBN) {C30B 29/38} | |
