Microwave plasma processing method and apparatus
Patent 5914051 Issued on June 22, 1999. Estimated Expiration Date: 
June 22, 2016. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
June 22, 2016. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMicrowave plasma generator Semiconductor wafer treating apparatus utilizing a plasma Processing of etching refractory metals Apparatus for treating material by using plasma Plasma processor Plasma processing apparatus Microwave plasma generating method and apparatus Patent #: 5276386 InventorsAssigneeApplicationNo. 443438 filed on 05/18/1995US Classes:216/69, Using microwave to generate the plasma118/723MW, Microwave gas energizing means (e.g., 2.45 gigahertz, microwave plasma, etc.)156/345.37, With heating or cooling means for apparatus part other than workpiece support156/345.42With magnetic field generating means for control of the etchant gasExaminersPrimary: Powell, William A.Assistant: Goudreau, George Attorney, Agent or FirmForeign Patent References
International ClassesH01L 021/302B65D 006/34 C23F 001/02 Foreign Application Priority Data1990-09-26 JPAbstractA microwave plasma processing method and apparatus of the type wherein a waveguide section includes electric discharge means isolated from a waveguide for the propagation of microwaves and having a plasma generation region therein, which method and apparatus are well suited for subjecting samples, such as semiconductor device substrates, to an etching process, a film forming process, etc. The microwaves are introduced into the electric discharge means in correspondence with only the traveling direction thereof, whereby uniformity in a plasma density distribution corresponding to the surface to-be-processed of the sample can be sharply enhanced, so that the sample processed by utilizing such plasma can attain an enhanced processing homogeneity within the surface to-be-processed. The temperature of the electric discharge block is controlled to decrease an amount of plasma polymers deposited on the electric discharge block, increase an amount existing in the plasma and increase an amount deposited on the sample to improve a selection ratio. | |
