Microwave plasma generator
Semiconductor wafer treating apparatus utilizing a plasma
Processing of etching refractory metals
Apparatus for treating material by using plasma
Plasma processing apparatus
Microwave plasma generating method and apparatus Patent #: 5276386
ApplicationNo. 443438 filed on 05/18/1995
US Classes:216/69, Using microwave to generate the plasma118/723MW, Microwave gas energizing means (e.g., 2.45 gigahertz, microwave plasma, etc.)156/345.37, With heating or cooling means for apparatus part other than workpiece support156/345.42With magnetic field generating means for control of the etchant gas
ExaminersPrimary: Powell, William A.
Assistant: Goudreau, George
Attorney, Agent or Firm
Foreign Patent References
International ClassesH01L 021/302
Foreign Application Priority Data1990-09-26 JP
AbstractA microwave plasma processing method and apparatus of the type wherein a waveguide section includes electric discharge means isolated from a waveguide for the propagation of microwaves and having a plasma generation region therein, which method and apparatus are well suited for subjecting samples, such as semiconductor device substrates, to an etching process, a film forming process, etc. The microwaves are introduced into the electric discharge means in correspondence with only the traveling direction thereof, whereby uniformity in a plasma density distribution corresponding to the surface to-be-processed of the sample can be sharply enhanced, so that the sample processed by utilizing such plasma can attain an enhanced processing homogeneity within the surface to-be-processed. The temperature of the electric discharge block is controlled to decrease an amount of plasma polymers deposited on the electric discharge block, increase an amount existing in the plasma and increase an amount deposited on the sample to improve a selection ratio.