Heterojunction bipolar semiconductor device
Patent 5912479 Issued on June 15, 1999. Estimated Expiration Date: 
July 25, 2017. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
July 25, 2017. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesCompound semiconductor integrated circuit device Integrated circuit composed of group III-V compound field effect and bipolar semiconductors Method for producing integrated quasi-complementary bipolar transistors and field effect transistors Semiconductor device Fabrication of vertical SiGe base HBT with lateral collector contact on thin SOI Patent #: 5583059 InventorsAssigneeApplicationNo. 900698 filed on 07/25/1997US Classes:257/192, Field effect transistor257/194, Doping on side of heterojunction with lower carrier affinity (e.g., high electron mobility transistor (HEMT))257/195, Combined with diverse type device257/197, Bipolar transistor257/198, Wide band gap emitter257/E21.695, Combination of bipolar and field-effect technologies (EPO)257/E27.015, In combination with bipolar transistor (EPO)257/E29.193, Comprising lattice mismatched active layers (e.g., SiGe strained layer transistors) (EPO)257/E29.315With heterojunction gate (e.g., transistors with semiconductor layer acting as gate insulating layer) (EPO)ExaminersPrimary: Mintel, WilliamAttorney, Agent or FirmInternational ClassesH01L 031/032.8H01L 031/033.6 H01L 031/072 H01L 031/109 Foreign Application Priority Data1996-07-26 JPAbstractA semiconductor device includes a heterojunction bipolar transistor and a junction gate type field effect transistor which are formed on a semiconductor base. A base region and graft base regions of the heterojunction bipolar transistor, and a channel region and source/drain regions of the junction gate type field effect transistor, are formed of a first semiconductor layer of a first conduction type. The first semiconductor layer is formed of mixed crystals of silicon-germanium which has a higher carrier mobility than silicon. An emitter region of the heterojunction bipolar transistor and a gate region of the junction gate type field effect transistor are formed of a second semiconductor layer of a second conduction type which makes a heterojunction with the first semiconductor layer. | |
