Plasma processing apparatus
Patent 5891252 Issued on April 6, 1999. Estimated Expiration Date: 
December 13, 2016. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
December 13, 2016. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesReduced pressure surface treatment apparatus Radio frequency electron cyclotron resonance plasma etching apparatus Patent #: 5401351 Inventors
AssigneeApplicationNo. 766818 filed on 12/13/1996US Classes:118/723AN, Having antenna118/723E, Having glow discharge electrodes (e.g., DC, AC, RF, etc.)118/723I, Radio frequency antenna or radio frequency inductive coil discharge means156/345.49With magnetic field generating means for control of the etchant gasExaminersPrimary: Breneman, R. BruceAssistant: Alejandro, Luz Attorney, Agent or FirmForeign Patent References
International ClassC23C 016/00Foreign Application Priority Data1995-12-15 JPAbstractA plasma processing apparatus in which power consumption is reduced, which can generate uniform plasma in a large range and in which minute processing in high etching selectivity and in high aspect ratio is enabled is disclosed. High density plasma is generated in a vacuum vessel housing a processed sample utilizing an electron cyclotron resonance phenomenon caused by an electromagnetic wave in an ultra-high frequency band and a magnetic field and the surface of the processed sample is etched using this plasma. An electromagnetic wave in an ultra-high frequency band for generating plasma is radiated from a planar conductive plate consisting of graphite or silicon which is arranged opposite to the surface of the processed sample into space inside the vacuum vessel. High density plasma in the low degree of dissociation can be generated by using an electromagnetic wave in an ultra-high frequency band and as a result, the controllability of etching reaction can be enhanced. Further, a radical effective in etching can be increased by reaction between the surface of a planar conductive plate for radiating an electromagnetic wave and plasma.Other References
Field of SearchHaving antennaRadio frequency antenna or radio frequency inductive coil discharge means Producing energized gas remotely located from substrate Having glow discharge electrodes (e.g., DC, AC, RF, etc.) with magnet (e.g., electron cyclotron resonance, etc.) With magnet (e.g., electron cyclotron resonance, etc.) Induction type Magnetically enhanced Magnetically enhanced | |
