Active pixel with a pinned photodiode
Patent 5880495 Issued on March 9, 1999. Estimated Expiration Date: 
January 8, 2018. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
January 8, 2018. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesActive pixel sensor with intra-pixel charge transfer Active pixel sensor integrated with a pinned photodiode Patent #: 5625210 InventorAssigneeApplicationNo. 004215 filed on 01/08/1998US Classes:257/233, Sensors not overlaid by electrode (e.g., photodiodes)257/291, Imaging array257/292, Photodiodes accessed by FETs257/E27.132, Pixel-elements with integrated switching, control, storage, or amplification elements (EPO)257/E27.133Photodiode array or MOS imager (EPO)ExaminersPrimary: Tran, Minh LoanAttorney, Agent or FirmInternational ClassH01L 031/062AbstractAn active pixel for use in an imaging array and formed in a semiconductor substrate having a first conductivity type. The active pixel comprises: a pinned photodiode formed in the semiconductor substrate; a transfer well having a second conductivity type formed in the substrate, the transfer well being adjacent to the pinned photodiode; a transfer gate adjacent the transfer well, the transfer gate for controlling the flow of a signal charge from the pinned photodiode through the transfer well and under the transfer gate; and an output well adjacent the transfer gate for receiving the signal charge and routing the signal charge to output circuitry.Field of SearchSensors not overlaid by electrode (e.g., photodiodes)Signal charge detection type (e.g., floating diffusion or floating gate non-destructive output) Light responsive or combined with light responsive device Imaging array Photodiodes accessed by FETs Complementary insulated gate field effect transistors | |
