Method of producing hydrogenated amorphous silicon film
Vapor phase growth on semiconductor wafers Patent #: 4745088
ApplicationNo. 946845 filed on 10/08/1997
US Classes:427/255.18, Silicon containing coating148/122, With special compositions427/255.37, Silicon dioxide coating427/255.38, Phosphorus or boron containing coating (e.g., aluminum boride, boron phosphide etc.)427/255.393, Silicon containing coating427/314, Heating or drying pretreatment438/488Polycrystalline semiconductor
ExaminersPrimary: King, Roy V.
Attorney, Agent or Firm
Foreign Patent References
International ClassC23C 016/00
AbstractA method of producing doped and undoped silicon layers on a substrate by chemical vapor deposition at elevated pressures of from about 10 to about 350 Torr whereby deposition occurs at practicable rates. A substrate is loaded in a vacuum chamber, the temperature adjusted to obtain a silicon deposit of predetermined crystallinity, and the silicon precursor gases fed to the chamber to a preselected high pressure. Both undoped and doped silicon can be deposited at high rates up to about 3000 angstroms per minute.