Low temperature high pressure silicon deposition method
Patent 5876797 Issued on March 2, 1999. Estimated Expiration Date: 
October 8, 2017. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
October 8, 2017. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMethod of producing hydrogenated amorphous silicon film Vapor phase growth on semiconductor wafers Patent #: 4745088 InventorsApplicationNo. 946845 filed on 10/08/1997US Classes:427/255.18, Silicon containing coating148/122, With special compositions427/255.37, Silicon dioxide coating427/255.38, Phosphorus or boron containing coating (e.g., aluminum boride, boron phosphide etc.)427/255.393, Silicon containing coating427/314, Heating or drying pretreatment438/488Polycrystalline semiconductorExaminersPrimary: King, Roy V.Attorney, Agent or FirmForeign Patent References
International ClassC23C 016/00AbstractA method of producing doped and undoped silicon layers on a substrate by chemical vapor deposition at elevated pressures of from about 10 to about 350 Torr whereby deposition occurs at practicable rates. A substrate is loaded in a vacuum chamber, the temperature adjusted to obtain a silicon deposit of predetermined crystallinity, and the silicon precursor gases fed to the chamber to a preselected high pressure. Both undoped and doped silicon can be deposited at high rates up to about 3000 angstroms per minute. | |
