Apparatus and method for determining the temperature of a radiating surface
April 17, 2017. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesEmissivity correction apparatus and method Bichannel radiation detection method Non-contact techniques for measuring temperature or radiation-heated objects Bichannel radiation detection apparatus Pyrometer apparatus and method Emissivity independent temperature measurement systems Indirect temperature-measurement of films formed on semiconductor wafers Multi-point pyrometry with real-time surface emissivity compensation Method and device for measuring temperature radiation using a pyrometer wherein compensation lamps are used Semiconductor processing technique, including pyrometric measurement of radiantly heated bodies InventorsAssigneeApplicationNo. 843925 filed on 04/17/1997US Classes:219/497, Comprising voltage and/or current measuring and comparing or combining means219/121.43, With chamber219/502, Utilizing light-sensitive and/or responsive means356/45, Plural color responsive359/359, Multilayer filter or multilayer reflector392/416With chamberExaminersPrimary: Paschall, Mark H.Attorney, Agent or FirmForeign Patent References
International ClassH05B 001/02AbstractThe present invention is generally directed to a system and process for accurately determining the temperature of an object, such as a semiconductive wafer, by sampling from the object radiation being emitted at a particular wavelength. In particular, a reflective device is placed adjacent to the radiating object. The reflective device includes areas of high reflectivity and areas of low reflectivity. The radiation being emitted by the object is sampled within both locations generating two different sets of radiation measurements. The measurements are then analyzed and a correction factor is computed based on the optical characteristics of the reflective device and the optical characteristics of the wafer. The correction factor is then used to more accurately determine the temperature of the wafer. Through this method, the emissivity of the wafer has only a minor influence on the calculated temperature.Other References
Field of SearchComprising voltage and/or current measuring and comparing or combining meansIncluding semiconductor means (e.g., transistor) Comprising nonlinear or negative temperature coefficient resistance means Utilizing light-sensitive and/or responsive means With chamber Thermally responsive By means to heat or cool OPTICAL PYROMETERS With sample engaging rod or tube Plural color responsive HAVING SIGNIFICANT INFRARED OR ULTRAVIOLET PROPERTY Multilayer filter or multilayer reflector With chamber With support for workpiece | |
