Crystallization and doping of amorphous silicon on low temperature plastic
Method for making polystalline silicon thin film
Method of forming a semiconductor device by activating regions with a laser light Patent #: 5561081
ApplicationNo. 694497 filed on 08/07/1996
US Classes:438/166, Including recrystallization step257/E21.134, Using a coherent energy beam, e.g., laser or electron beam (EPO)257/E21.413, Lateral single gate single channel transistor with noninverted structure, i.e., channel layer is formed before gate (EPO)438/487Utilizing wave energy (e.g., laser, electron beam, etc.)
ExaminersPrimary: Niebling, John F.
Assistant: Lebentritt, Michael S.
Attorney, Agent or Firm
Foreign Patent References
International ClassesH01L 021/00
Foreign Application Priority Data1995-08-07 JP
AbstractIn irradiating and scanning an amorphous silicon film formed on the glass substrate with a linear laser beam, the glass substrate is placed so as to assume a convex surface. In a heated state, the amorphous silicon film is irradiated and scanned with the linear laser beam having an inverted-U-shaped focus line that approximately coincides with the convex surface. Slow cooling is thereafter performed. A silicon film having uniform crystallinity is formed on a glass substrate having flat surface. Also, A thin film transistor (TFT) having a uniform threshold voltage is produced by using the crystalline silicon film.