Method for producing semiconductor device
Patent 5858822 Issued on January 12, 1999. Estimated Expiration Date: 
August 7, 2016. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
August 7, 2016. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesCrystallization and doping of amorphous silicon on low temperature plastic Method for making polystalline silicon thin film Method of forming a semiconductor device by activating regions with a laser light Patent #: 5561081 InventorsAssigneeApplicationNo. 694497 filed on 08/07/1996US Classes:438/166, Including recrystallization step257/E21.134, Using a coherent energy beam, e.g., laser or electron beam (EPO)257/E21.413, Lateral single gate single channel transistor with noninverted structure, i.e., channel layer is formed before gate (EPO)438/487Utilizing wave energy (e.g., laser, electron beam, etc.)ExaminersPrimary: Niebling, John F.Assistant: Lebentritt, Michael S. Attorney, Agent or FirmForeign Patent References
International ClassesH01L 021/00H01L 021/20 Foreign Application Priority Data1995-08-07 JPAbstractIn irradiating and scanning an amorphous silicon film formed on the glass substrate with a linear laser beam, the glass substrate is placed so as to assume a convex surface. In a heated state, the amorphous silicon film is irradiated and scanned with the linear laser beam having an inverted-U-shaped focus line that approximately coincides with the convex surface. Slow cooling is thereafter performed. A silicon film having uniform crystallinity is formed on a glass substrate having flat surface. Also, A thin film transistor (TFT) having a uniform threshold voltage is produced by using the crystalline silicon film. | |
