U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Method and apparatus for controlling the temperature of reaction chamber walls

Patent 5855677 Issued on January 5, 1999. Estimated Expiration Date: Icon_subject April 8, 2017. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

Planar reactive evaporation method for the deposition of compound semiconducting films
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Inventor: Fraas

Transfer and temperature monitoring apparatus
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Inventor: Luscher

Epitaxial growing apparatus
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Method for increasing the batch size of a barrel epitaxial reactor and reactor produced thereby
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Heat treating apparatus with cooling fluid nozzles
Patent #: 5097890
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Inventor: Nakao

Double-dome reactor for semiconductor processing
Patent #: 5108792
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In-situ measurement of a thin film deposited on a wafer
Patent #: 5258824
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Inventor: Carlson, et al.

Apparatus and method for determining wafer temperature using pyrometry
Patent #: 5305417
Issued on: 04/19/1994
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Device for thermal treatment and film forming process Patent #: 5346555
Issued on: 09/13/1994
Inventor: Nunotani, et al.

Inventors

Application

No. 831797 filed on 04/08/1997

US Classes:

118/666, Temperature responsive118/724, By means to heat or cool118/725, Substrate heater216/59, With measuring, testing, or inspecting216/60, By optical means or of an optical property216/61, By electrical means or of an electrical property422/202, Heat-exchange jacket surrounding reaction chamber427/8, MEASURING, TESTING, OR INDICATING427/248.1COATING BY VAPOR, GAS, OR SMOKE

Examiners

Primary: Beck, Shrive
Assistant: Meeks, Timothy

Foreign Patent References

  • 0293021 EP. 03/21/1988
  • 0382988 EP 08/21/1990
  • 0467392 EP. 07/21/1991
  • 0709488 EP. 01/21/1996
  • 60-175414 JP 09/21/1985
  • 60-175415 JP 09/21/1985
  • 2-148717 JP 06/21/1990

International Class

C23C 016/52

Abstract

An apparatus and a concomitant method for controlling coolant (air) flow proximate a reaction chamber within a workpiece processing system such that the temperature of a wall of the reaction chamber is maintained at a predefined target temperature. The target temperature is typically a temperature that optimizes a process concurrently being accomplished within the chamber, e.g., utilizing one temperature during deposition processes and a different temperature during cleaning processes. The apparatus contains a temperature measuring device to measure the temperature of the chamber wall. The measured temperature is compared to the predefined target temperature. A closed loop system controls the air flow proximate the chamber walls such that the measured temperature becomes substantially equal to the target temperature. Air flow control is provided by an air flow control device located within an inlet conduit that supplies air to a shroud for channeling the air past the reaction chamber. The shroud forms a portion of a housing which supports and encloses the reaction chamber.

Other References

  • Kirk-Othmer Encyclopedia of Chemical Technology, John Wiley & Sons, vol. 9 (1980) pp. 268, 779, vol. 22, (1983) pp. 679, 697-700. (No Month
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