Microelectronic thermoelectric device and systems incorporating such device
Patent 5837929 Issued on November 17, 1998. Estimated Expiration Date: 
April 4, 2016. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
April 4, 2016. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 2588254 3071495 3252013 3309881 3436274 3437576 3485680 3495141 3715288 Thermopile for microwatt thermoelectric generator InventorAssigneeApplicationNo. 627347 filed on 04/04/1996US Classes:136/225, Having strip, film or plate-type thermocouples117/2, PROCESSES OF GROWTH WITH A SUBSEQUENT STEP ACTING ON THE CRYSTAL TO ADJUST THE IMPURITY AMOUNT (E.G., DIFFUSING, DOPING, GETTERING, IMPLANTING)136/201, Processes136/203, Peltier effect device204/192.23, Silicon containing204/192.25, Semiconductor427/526, Nonuniform or patterned ion plating or ion implanting (e.g., mask, etc.)427/527Silicon present in substrate, plating, or implanted layerExaminersPrimary: Gorgos, KathrynAssistant: Carroll, Chrisman D. Attorney, Agent or FirmForeign Patent References
International ClassesH01L 035/02H01L 035/34 AbstractA method of making a microelectronic thermoelectric device comprises the steps of providing a substrate of a predetermined material, creating thermally isolated, alternating P-type and N-type semiconductor materials on the substrate, electrically connecting the P-type areas to adjacent N-type areas on opposite sides of each P-type area so that each side of a P-type area is connected to an adjacent different N-type area and leaving a free P-type end and a free N-type end, and providing an electrical lead on the free end of the P-type area and an electrical lead on the free end of said N-type area for connection to a source of electrical power. Further, a microelectronic thermoelectric device comprises a plurality of sections of semiconductor material of a first conductivity type and a plurality of sections of second conductivity type opposite to the first type. The sections are arranged to alternate from one type to the other and are thermally isolated from one another. A plurality of metal bridges are provided to interconnect each opposite end of a section to an end of an adjacent different section of opposite conductivity type. Sections of opposite conductivity type at free ends of the arrangement have metal leads attached thereto for the application of electrical energy. The sections have a predetermined height in the range of less than 1 micron to several hundreds of microns. Systems for heating or cooling are described incorporating the microelectronic thermoelectric device.Other References
Field of SearchProcessesPeltier effect device Including additional heat exchange means Thermopile Having strip, film or plate-type thermocouples Specified deposition material or use Silicon containing Semiconductor Nonuniform or patterned ion plating or ion implanting (e.g., mask, etc.) Silicon present in substrate, plating, or implanted layer PROCESSES OF GROWTH WITH A SUBSEQUENT STEP ACTING ON THE CRYSTAL TO ADJUST THE IMPURITY AMOUNT (E.G., DIFFUSING, DOPING, GETTERING, IMPLANTING) |
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