Oxide thin film, electronic device substrate and electronic device
Patent 5828080 Issued on October 27, 1998. Estimated Expiration Date: 
August 17, 2015. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
August 17, 2015. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.InventorsAssigneeApplicationNo. 516356 filed on 08/17/1995US Classes:257/43, SEMICONDUCTOR IS AN OXIDE OF A METAL (E.G., CUO, ZNO) OR COPPER SULFIDE257/310, With high dielectric constant insulator (e.g., Ta 2 O 5 )257/314, Variable threshold (e.g., floating gate memory device)257/410, Gate insulator includes material (including air or vacuum) other than SiO 2257/411, Composite or layered gate insulator (e.g., mixture such as silicon oxynitride)257/E21.193, On single crystalline silicon (EPO)257/E21.271, Composed of oxide or glassy oxide or oxide based glass (EPO)257/E21.433, Where the source and drain or source and drain extensions are self-aligned to sides of gate (EPO)257/E29.162Insulating materials for IGFET (EPO)ExaminersPrimary: Tran, Minh LoanAttorney, Agent or FirmForeign Patent References
International ClassesH01L 029/12H01L 029/76 Foreign Application Priority Data1994-08-17 JPAbstractThe invention provides an oxide thin film in the form of an epitaxial film of the composition: Zr1-x Rx O2-δ wherein R is a rare earth metal inclusive of Y, x=0 to 0.75, preferably x=0.20 to 0.50, formed on a surface of a single crystal silicon substrate. A rocking curve of the film has a half-value width of up to 1.50°. The film has a ten point mean roughness Rz of up to 0.60 nm across a reference length of 500 nm. An epitaxial film of the composition ZrO2 is constructed by unidirectionally oriented crystals. When a functional film is to be formed on the oxide thin film serving as a buffer film, an adequately epitaxially grown functional film of quality is available. Particularly when the single crystal substrate is rotated within its plane, an oxide thin film of uniform high quality having an area as large as 10 cm2 or more is obtained.Other References
Field of SearchTunneling through region of reduced conductivitySEMICONDUCTOR IS AN OXIDE OF A METAL (E.G., CUO, ZNO) OR COPPER SULFIDE With high dielectric constant insulator (e.g., Ta 2 O 5 ) Variable threshold (e.g., floating gate memory device) With floating gate electrode Gate insulator includes material (including air or vacuum) other than SiO 2 Composite or layered gate insulator (e.g., mixture such as silicon oxynitride) With ferroelectric material layer | |
