Photosensitive element having two regions with superior frequency characteristics and conversion characteristics respectively
Patent 5825071 Issued on October 20, 1998. Estimated Expiration Date: 
May 27, 2017. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
May 27, 2017. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMonolithic IC having pin photodiode and an electrically active element accommodated on the same semi-conductor substrate Photoelectrical converter with refresh means Patent #: 5563431 InventorAssigneeApplicationNo. 863587 filed on 05/27/1997US Classes:257/440, With different sensor portions responsive to different wavelengths (e.g., color imager)257/436, With means for increasing light absorption (e.g., redirection of unabsorbed light)257/446, With specific isolation means in integrated circuit257/461, Light responsive pn junction257/463, With particular doping concentration257/E27.129, In a repetitive configuration (EPO)257/E31.057PN homojunction potential barrier (EPO)ExaminersPrimary: Whitehead, Carl Jr.Attorney, Agent or FirmForeign Patent References
International ClassesH01L 029/76H01L 029/94 Foreign Application Priority Data1994-06-30 JPAbstractA semiconductor photosensitive element comprises first and second photosensitive regions. The first photosensitive region is different from the second photosensitive region in its structure and thereby the first photosensitive region has photoelectric conversion characteristic and frequency characteristic which are different from those of the second photosensitive region. A method for forming a semiconductor photosensitive element includes steps of forming a high concentration impurity region of a first conductivity type and an element isolation region on a semiconductor of the first conductivity type, forming a semiconductor layer of a second conductivity type on the semiconductor substrate and high concentration impurity region, thereby to form a first photosensitive region formed of the high concentration impurity region 10 formed on the semiconductor substrate and the photoelectric conversion layer consisting of the semiconductor layer and a second photosensitive region formed of the photoelectric conversion layer consisting of the semiconductor layer formed on the semiconductor substrate. | |
