Monolithic IC having pin photodiode and an electrically active element accommodated on the same semi-conductor substrate
Photoelectrical converter with refresh means Patent #: 5563431
ApplicationNo. 863587 filed on 05/27/1997
US Classes:257/440, With different sensor portions responsive to different wavelengths (e.g., color imager)257/436, With means for increasing light absorption (e.g., redirection of unabsorbed light)257/446, With specific isolation means in integrated circuit257/461, Light responsive pn junction257/463, With particular doping concentration257/E27.129, In a repetitive configuration (EPO)257/E31.057PN homojunction potential barrier (EPO)
ExaminersPrimary: Whitehead, Carl Jr.
Attorney, Agent or Firm
Foreign Patent References
International ClassesH01L 029/76
Foreign Application Priority Data1994-06-30 JP
AbstractA semiconductor photosensitive element comprises first and second photosensitive regions. The first photosensitive region is different from the second photosensitive region in its structure and thereby the first photosensitive region has photoelectric conversion characteristic and frequency characteristic which are different from those of the second photosensitive region. A method for forming a semiconductor photosensitive element includes steps of forming a high concentration impurity region of a first conductivity type and an element isolation region on a semiconductor of the first conductivity type, forming a semiconductor layer of a second conductivity type on the semiconductor substrate and high concentration impurity region, thereby to form a first photosensitive region formed of the high concentration impurity region 10 formed on the semiconductor substrate and the photoelectric conversion layer consisting of the semiconductor layer and a second photosensitive region formed of the photoelectric conversion layer consisting of the semiconductor layer formed on the semiconductor substrate.