Gettering process with multi-step annealing and inert ion implantation
Method for enhancing growth of SiO2 in Si by the implantation of germanium
Low-temperature in-situ dry cleaning process for semiconductor wafers
Formation of shallow junction by implantation of dopant into partially crystalline disordered region
Method of forming a gate insulating film involving a step of cleaning using an ammonia-peroxide solution
Discretionary gettering of semiconductor circuits
Method of providing lower contact resistance in MOS transistor structures
Application of electronic properties of germanium to inhibit n-type or p-type diffusion in silicon
Method for forming a silicide using ion beam mixing Patent #: 5470794
ApplicationNo. 703735 filed on 08/27/1996
US Classes:438/528, Providing nondopant ion (e.g., proton, etc.)257/E21.101, Using reduction or decomposition of gaseous compound yielding solid condensate, i.e., chemical deposition (EPO)257/E21.133, Epitaxial re-growth of non-monocrystalline semiconductor material, e.g., lateral epitaxy by seeded solidific ation, solid-state crystallization, solid-state graphoepitaxy, explosive crystallization, grain growth in polycrystalline material (EPO)257/E21.219, Chemical etching (EPO)257/E21.228, Wet cleaning only (EPO)257/E21.43, Recessing gate by adding semiconductor material at source (S) or drain (D) location, e.g., transist or with elevated single crystal S and D (EPO)438/974SUBSTRATE SURFACE PREPARATION
ExaminersPrimary: Niebling, John F.
Assistant: Mulpuri, S.
Attorney, Agent or Firm
Foreign Patent References
International ClassH01L 021/265
Foreign Application Priority Data1995-08-28 JP
AbstractOn treating a substrate surface of a single crystal silicon substrate, Ge ions are preliminarily implanted into the substrate surface to be formed as a Ge-implanted silicon film on the single crystal silicon substrate. A film surface of Ge-implanted silicon film is treated by oxidizing the film surface to form a spontaneous oxide film. Subsequently, the spontaneous oxide film is subjected to a heat treatment in a reduced-pressure atmosphere to remove the spontaneous oxide film. Alternatively, the spontaneous oxide film is subjected to a heat treatment with a reducing gas of, for example, a hydrogen gas, a silane-based gas, or a GeH4 gas supplied onto the spontaneous oxide film to remove the spontaneous oxide film. Preferably, the Ge ions are preliminarily implanted into the substrate surface to be formed as Ge-implanted silicon film which consists, in atomic percent, essentially of at least 1% Ge.