Multilayer thin film, substrate for electronic device, electronic device, and preparation of multilayer oxide thin film
Patent 5801105 Issued on September 1, 1998. Estimated Expiration Date: 
June 14, 2016. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
June 14, 2016. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMethod for making high-current, ohmic contacts between semiconductors and oxide superconductors Light beam deflector for deflecting light from optical waveguide by inclined grating Patent #: 5185829 InventorsAssigneeApplicationNo. 663741 filed on 06/14/1996US Classes:438/785, Insulative material is compound of refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)257/E21.009, Dielectric having perovskite structure (EPO)438/2, HAVING SUPERCONDUCTIVE COMPONENT438/3, HAVING MAGNETIC OR FERROELECTRIC COMPONENT438/648Having refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)ExaminersPrimary: Tsai, JeyAttorney, Agent or FirmInternational ClassesH01L 021/31H01L 021/469 Foreign Application Priority Data1995-08-04 JPAbstractA multilayer thin film of the invention has an oxide thin film formed on a semiconductor single crystal substrate, and the oxide thin film includes at least one epitaxial thin film composed mainly of zirconium oxide or zirconium oxide stabilized with a rare earth metal element (inclusive of scandium and yttrium). Included is an oriented thin film formed on the oxide thin film from a dielectric material of perovskite or tungsten bronze type with its c-plane unidirectionally oriented parallel to the substrate surface. Consequently, there are provided a perovskite oxide thin film of (001) orientation, a substrate for an electronic device comprising the thin film, and a method for preparing the thin film.Field of SearchHAVING SUPERCONDUCTIVE COMPONENTHAVING MAGNETIC OR FERROELECTRIC COMPONENT Insulative material is compound of refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof) Having refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof) | |
