Tasin oxygen diffusion barrier in multilayer structures
June 21, 2016. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesSemiconductor and process of fabrication thereof Reaction barrier for a multilayer structure in an integrated circuit Low resistance device element and interconnection structure High-temperature electrical contact for making contact to ceramic materials and improved circuit element using the same Plurality of passive elements in a semiconductor integrated circuit and semiconductor integrated circuit in which passive elements are arranged Conductive exotic-nitride barrier layer for high-dielectric-constant materials Patent #: 5504041 Inventors
AssigneeApplicationNo. 668241 filed on 06/21/1996US Classes:257/751, At least one layer forms a diffusion barrier257/369, Complementary insulated gate field effect transistors257/413, Polysilicon laminated with silicide257/757, Silicide of refractory or platinum group metal257/770, Molybdenum, tungsten, or titanium or their silicides257/E29.157, Including barrier layer between silicon and non-Si electrode257/E29.159, Diverse conductors (EPO)257/E29.165, Multiple layers (EPO)257/E29.345Metal-insulator-semiconductor (e.g., MOS capacitor) (EPO)ExaminersPrimary: Jackson, JeromeAttorney, Agent or FirmInternational ClassesH01L 021/823.8H01L 029/49 AbstractA multilayer structure having an oxygen or dopant diffusion barrier fabricated of an electrically conductive, thermally stable material of refractory metal-silicon-nitrogen which is resistant to oxidation, prevents out-diffusion of dopants from silicon and has a wide process window wherein the refractory metal is selected from Ta, W, Nb, V, Ti, Zr, Hf, Cr and Mo.Other References
Field of SearchAt least one layer forms a diffusion barrierWith adhesion promoting means (e.g., layer of material) to promote adhesion of contact to an insulating layer Molybdenum, tungsten, or titanium or their silicides Polysilicon laminated with silicide Complementary insulated gate field effect transistors Silicide of refractory or platinum group metal | |
