Method for forming shallow junction for semiconductor device
November 12, 2016. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMethod of fabricating improved Schottky barrier contacts Method of manufacturing a multilayer electrode containing silicide for a semiconductor device Method for forming protective barrier on silicided regions Method for forming shallow junctions with a low resistivity silicide layer Method for lowering the phase transformation temperature of a metal silicide Method for forming a contact with activation and silicide forming heat treatment Patent #: 5620926 InventorAssigneeApplicationNo. 744154 filed on 11/12/1996US Classes:438/301, Source or drain doping257/E21.165, Conductive layer comprising silicide (EPO)257/E21.433, Where the source and drain or source and drain extensions are self-aligned to sides of gate (EPO)438/533, And contact formation (i.e., metallization)438/586, Combined with formation of ohmic contact to semiconductor region438/655SilicideExaminersPrimary: Quach, T. N.Attorney, Agent or FirmInternational ClassesH01L 021/336H01L 021/265 Foreign Application Priority Data1995-11-13 KRAbstractA method for forming a shallow junction of a semiconductor device using a zirconium film to cover a semiconductor substrate and implanting impurities into the zirconium film. A titanium film is then formed over the zirconium film and both the zirconium and the titanium films are subjected to a thermal treatment to form a zirconium silicide and a titanium silicide. Unreacted parts of the zirconium film and titanium film are removed and the zirconium and titanium silicides are then subject to a second thermal treatment.Other References
Field of SearchAnd contact formationIncluding heat treatment And contact formation (i.e., metallization) Silicide Silicide Having refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof) Of refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof) With epitaxial semiconductor formation in groove Self-aligned Source or drain doping Combined with formation of ohmic contact to semiconductor region | |
