Capacitor and manufacturing method thereof
Patent 5790368 Issued on August 4, 1998. Estimated Expiration Date: 
June 26, 2016. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
June 26, 2016. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesSrTiO3 barrier layer capacitor 5117333 Electronic circuit substrate Semiconductor-type laminated ceramic capacitor with a grain boundary-insulated structure Method for manufacturing a ceramic capacitor having varistor characteristics Method of manufacturing solid electrolytic capacitor Solid electrolytic capacitor and method of manufacturing the same Patent #: 5461537 InventorsAssigneeApplicationNo. 673176 filed on 06/26/1996US Classes:361/523, Solid electrolytic capacitor (e.g., dry electrolytic capacitor)29/25.03, Electrolytic device making (e.g., capacitor)361/524, Dielectric361/527Organic salt (e.g., TCNQ)ExaminersPrimary: Picard, Leo P.Assistant: Dinkins, Anthony Attorney, Agent or FirmInternational ClassesH01G 009/00H01G 009/028 Foreign Application Priority Data1995-06-27 JPAbstractA capacitor comprising: a porous sintered body 2 consisting mainly of titanium; a dielectric film 3 which is formed on the surface of the sintered body and which consists mainly of a perovskite type composite oxide having a general formula of ATiO3 ; a conductor or semiconductor which is formed on the surface of the dielectric film; and a counter-electrode which conducts to the conductor or semiconductor and which faces the sintered body; wherein the porosity of the porous sintered body is 20% or more. The capacitor is fabricated by immersing the porous sintered body in an aqueous solution containing strontium or barium, by performing a hydrothermal treatment at a specified temperature to form a composite oxide film having the above-described general formula as a dielectric film 3 on the surface of the sintered body; by forming a conductor or semiconductor electrode 4 on the surface of the oxide film; and by forming a counter electrode which conducts to the electrode and which faces the sintered body. | |
