Patent References 3745564 Surface-acoustic-wave parametric device Acoustic-wave device Acceleration insensitive oscillator Method of making a piezoelectric shear wave resonator High frequency oscillator comprising cointegrated thin film resonator and active device Integrated tunable resonators for use in oscillators and filters Lateral field FBAR Monolithic circuit with integrated bulk structure resonator Piezoelectric lead zirconium titanate device and method for forming same Inventors
ApplicationNo. 559706 filed on 11/15/1995US Classes:310/334, Acoustic wave type generator or receiver310/311, Piezoelectric elements and devices310/324DiaphragmExaminersPrimary: Dougherty, Thomas M.Attorney, Agent or FirmForeign Patent References
International ClassH01L 029/66Foreign Application Priority Data1994-11-24 JPAbstractEmbodiments of the present invention provide a small and well-characterized bulk acoustic wave device by fabricating a filter having a wide band width or a resonator having a wide oscillation frequency range together with a semiconductor circuit. In embodiments of the present invention, a bulk acoustic wave device comprises a semiconductor substrate having a dielectric substance layer thereon, the dielectric substance layer has a ground conductor layer thereon, the ground conductor layer has a piezoelectric ceramic thin film thereon and the piezoelectric ceramic thin film has a conductive electrode pattern thereon. The thickness of the piezoelectric ceramic thin film is more than ten times the thickness of the ground conductor layer, and the wave number of acoustic waves that propagate in a direction parallel to a surface of the piezoelectric ceramic thin film multiplied by the thickness of the piezoelectric ceramic thin film is less than 2.Other References
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