Method for depositing doped amorphous or polycrystalline silicon on a substrate
Patent 5789030 Issued on August 4, 1998. Estimated Expiration Date: 
March 18, 2016. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
March 18, 2016. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesIn-situ doped silicon using tertiary butyl phosphine Integrated circuit fabrication utilizing amorphous layers Method and apparatus for in-situ doping of deposited silicon Method for in-situ doping of deposited silicon In situ method for cleaning silicon surface and forming layer thereon in same chamber Patent #: 5352636 InventorApplicationNo. 618281 filed on 03/18/1996US Classes:427/309, Inorganic base257/E21.011, Formation of electrode (EPO)257/E21.101, Using reduction or decomposition of gaseous compound yielding solid condensate, i.e., chemical deposition (EPO)427/255.18, Silicon containing coating427/255.7, Plural coatings applied by vapor, gas, or smoke427/534, Cleaning or removing part of substrate (e.g., etching with plasma, glow discharge, etc.)427/535, Plasma (e.g., cold plasma, corona, glow discharge, etc.)427/578, Silicon containing coating material438/488, Polycrystalline semiconductor438/925Fluid growth doping control (e.g., delta doping, etc.)ExaminersPrimary: King, Roy V.Attorney, Agent or FirmForeign Patent References
International ClassesB05D 003/04B05D 003/06 AbstractA method for forming an in-situ doped amorphous or polycrystalline silicon thin film on a substrate is provided. The method includes placing the substrate in a reaction chamber of a CVD reactor and introducing a silicon gas species into the reaction chamber. The flow of the silicon gas species is continued for a time period sufficient to dehydrate the substrate and form a thin layer of silicon. Following formation of the thin layer of silicon, a dopant gas species is introduced into the reaction chamber and continued with the flow of the silicon gas species to form the doped silicon thin film. In an illustrative embodiment a phosphorus doped amorphous silicon thin film for a cell plate of a semiconductor capacitor is formed in a LPCVD reactor.Other References
Field of SearchCOATING BY VAPOR, GAS, OR SMOKEInorganic base Heating or drying pretreatment Silicon containing coating material Cleaning or removing part of substrate (e.g., etching with plasma, glow discharge, etc.) Plasma (e.g., cold plasma, corona, glow discharge, etc.) Silicon compound containing coating Inorganic coating Plural coatings applied by vapor, gas, or smoke Polycrystalline semiconductor Fluid growth doping control (e.g., delta doping, etc.) | |
