Semiconductor device having a GESC layer between silicon layers with triangular Ge concentration
Patent 5783839 Issued on July 21, 1998. Estimated Expiration Date: 
March 21, 2017. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
March 21, 2017. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMethod for epitaxially growing Gex Si1-x layers on Si utilizing molecular beam epitaxy Device having strain induced region of altered bandgap Semiconductor device having a high current gain and a higher Ge amount at the base region than at the emitter and collector regions, and photoelectric conversion apparatus using the device Patent #: 5691546 InventorsAssigneeApplicationNo. 821926 filed on 03/21/1997US Classes:257/21, Light responsive structure257/19, Si x Ge 1-x257/55, Amorphous semiconductor is alloy or contains material to change band gap (e.g., Si x Ge 1-x , SiN y )257/63, Amorphous semiconductor is alloy or contains material to change band gap (e.g., Si x Ge 1-x , SiN y )257/65, Non-single crystal, or recrystallized, material containing non-dopant additive, or alloy of semiconductor materials (e.g., Ge x Si 1- x, polycrystalline silicon with dangling bond modifier)257/458, PIN detector, including combinations with non-light responsive active devices257/461, Light responsive pn junction257/E31.035, Including, apart from doping material or other impurity, only Group IV element or compound (e.g., Si-SiGe superlattice) (EPO)438/37, Graded composition438/87, Graded composition438/933GERMANIUM OR SILICON OR GE-SI ON III-VExaminersPrimary: Thomas, TomAssistant: Abraham, Fetsum Attorney, Agent or FirmForeign Patent References
International ClassH01L 029/06Foreign Application Priority Data1996-03-22 JPAbstractDisclosed is a semiconductor device, which is used as an optical detector and has: a photodiode section which has a first silicon layer, a light-absorbing layer and a second silicon layer which are in turn layered on a silicon substrate; wherein the light-absorbing layer is formed as a single silicon-germanium epitaxial layer and the single silicon-germanium epitaxial layer has a germanium concentration distribution which provides germanium concentrations of zero at its interfaces to the first silicon layer and the second silicon layer and provides a triangle-shaped concentration profile that a peak concentration value is provided in the middle of the single silicon-germanium epitaxial layer.Field of SearchSi x Ge 1-xLight responsive structure Responsive to nonelectrical external signals (e.g., light) Amorphous semiconductor is alloy or contains material to change band gap (e.g., Si x Ge 1-x , SiN y ) Amorphous semiconductor is alloy or contains material to change band gap (e.g., Si x Ge 1-x , SiN y ) Non-single crystal, or recrystallized, material containing non-dopant additive, or alloy of semiconductor materials (e.g., Ge x Si 1- x, polycrystalline silicon with dangling bond modifier) Discrete light emitting and light responsive devices With heterojunction Sensors not overlaid by electrode (e.g., photodiodes) Photodiodes accessed by FETs Sensor with region of high carrier recombination (e.g., magnetodiode with carriers deflected to recombination region by magnetic field) With means for increasing light absorption (e.g., redirection of unabsorbed light) PIN detector, including combinations with non-light responsive active devices Light responsive pn junction Phototransistor Graded composition Graded composition GERMANIUM OR SILICON OR GE-SI ON III-V | |
