Semiconductor device having a multi-layer metallization structure
Semiconductor device having a multi-layer metallization structure Patent #: 5572071
ApplicationNo. 703533 filed on 08/27/1996
US Classes:257/753, With adhesion promoting means (e.g., layer of material) to promote adhesion of contact to an insulating layer257/751, At least one layer forms a diffusion barrier257/763, At least one layer of molybdenum, titanium, or tungsten257/764, Alloy containing molybdenum, titanium, or tungsten257/767, Resistive to electromigration or diffusion of the contact or lead material257/770, Molybdenum, tungsten, or titanium or their silicides257/774, Via (interconnection hole) shape257/E23.019, Consisting of layered constructions comprising conductive layers and insulating layers, e.g., planar contacts (EPO)257/E23.16, Additional layers associated with aluminum layers, e.g., adhesion, barrier, cladding layers (EPO)257/E23.163Principal metal being refractory metal (EPO)
ExaminersPrimary: Arroyo, Teresa M.
Attorney, Agent or Firm
Foreign Patent References
International ClassesH01L 023/48
Foreign Application Priority Data1995-12-28 JP
AbstractA titanium film 14 is formed on a whole surface including an inner surface of a hole 10. Then the titanium film 14 outside of the interior of the hole 10 is removed by the chemical mechanical polishing (CMP) method, the resist etchback method or the ECR plasma etching method. Thereafter a titanium nitride film 15 is formed on the whole surface. Consequently, when a tungsten film 16 is formed, using a fluorine containing gas such as WF6 gas, etc., since there exists no titanium film 14 outside of the hole 10 and only the titanium nitride film 15 resistant to the fluorine containing gas exists there, no peeling-off of the titanium nitride film 15 due to corrosion of the titanium film 14 takes place, and thus it is prevented that it produces a dust source.