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Silicon carbide gemstones

Patent 5762896 Issued on June 9, 1998. Estimated Expiration Date: Icon_subject August 31, 2015. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

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Inventors

Assignee

Application

No. 521635 filed on 08/31/1995

US Classes:

423/345, Of carbon (i.e., silicon carbide)117/19, Forming an intended mixture (excluding mixed crystal) (e.g., doped)117/33, Replenishing of precursor during growth (e.g., continuous method, zone pulling)117/929, Carbon (e.g., diamond) {C30B 29/04}427/204Silicon compound containing particles (e.g., sand, etc.)

Examiners

Primary: Garrett, Felisa

Attorney, Agent or Firm

International Class

C01B 031/36

Abstract

Synthetic gemstones having extraordinary brilliance and hardness are formed from large single crystals of relatively low impurity, translucent silicon carbide of a single polytype that are grown in a furnace sublimation system. The crystals are cut into rough gemstones that are thereafter fashioned into finished gemstones. A wide range of colors and shades is available by selective doping of the crystal during growth. A colorless gemstone is produced by growing the crystal undoped in a system substantially free of unwanted impurity atoms.

Other References

  • Hurlbut, Cornelius S. and Kammerling, Robert C. (1991) Gemology 2nd Edition, John Wiley: New York. pp. 309-324
  • Faust, J.W., Campbell, R.B., Choyke, W.J., and Patrick, L. (1973) Tables of Data on Silicon Carbide, Appendix II. Conference Proceedings from the Executive and Program Committees of the International Conference on Silicon Carbide-1973
  • Mandelung, O. (Ed.). (1991) Semiconductors: Group IV Elements and III-V Compounds. In: Data in Science and Technology, Poerschke, R. (Ed. in Chief). Springer-Verlag, Berlin, Heidelberg, New York pp. 47-57
  • Landolt-Borstein. (1982). Physic of Group IV Elements and III-V Compounds. New Series, Group III. vol. 17. Berlin, Heidelberg, New York. pp. 133-142 and 403-591
  • Burgemeister, E.A. von Muench, W. and Pettenpaul, E. (1979) Thermal Conductivity and Electrical Properties of 6H Silicon Carbide. Journal of Applied Physics. 50(9) 5790-5794
  • O'Dohoghue, M. (1983) A Guide to Man-made Gemstones, Van Nostrand Reinhold: New York
  • Gemological Institute of America. (1989). The GIA Jeweler's Manual, 3rd Edition. Santa Monica, CA: GIA. pp. 241-245
  • Gemological Institute of America. (1994). Colored Stone Course, Assignment 1: Course Introduction. Santa Monica, CA: GIA. pp. 9-17
  • Gemological Institute of America. (1994). Colored Stone Course, Assignment 7: Fashioning Styles. Santa Monica, CA: GIA. pp. 5-13
  • Gemological Institute of America. (1994., Colored Stone Course, Assignment 17: Fashioning Processess. Santa Monica, CA: GIA. pp. 12-16
  • Nassau, K. (1980). Gems Made by Man, Gemological Institute of America, Santa Monica, California, pp. 252-25
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