Spin-polarized electron emitter having semiconductor opto-electronic layer with split valence band and reflecting mirror
May 5, 2015. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesSuperlattice optical device Epitaxial gallium arsenide semiconductor on silicon substrate with gallium phosphide and superlattice intermediate layers Heterostructure laser with lattice mismatch 5117469 Biaxial-stress barrier shifts in pseudomorphic tunnel devices Semiconductor optical device Semiconductor device for emitting highly spin-polarized electron beam Photodetector with absorbing region having resonant periodic absorption between reflectors Patent #: 5389797 InventorsAssigneeApplicationNo. 124624 filed on 09/22/1993US Classes:257/436, With means for increasing light absorption (e.g., redirection of unabsorbed light)250/423P, Photoionization type257/11, Combined with a heterojunction involving a III-V compound313/113, Reflector313/310DISCHARGE DEVICES HAVING A THERMIONIC OR EMISSIVE CATHODEExaminersPrimary: Jackson, JeromeAssistant: Guay, John Attorney, Agent or FirmForeign Patent References
International ClassH01L 031/030.4Foreign Application Priority Data1992-09-25 JPAbstractAn electron emitting element including a semiconductor opto-electronic layer having a split valence band and capable of emitting a beam of spin-polarized electrons from an emitting surface thereof upon incidence of an excitation laser radiation upon the emitting surface, and a reflecting mirror formed on one of opposite sides of the opto-electronic layer remote from the emitting surface and cooperating with the emitting surface to effect multiple reflection therebetween of the incident laser radiation. The emitting element may be provided with a semiconductor light modulator element for modulating the intensity of the laser radiation incident upon the opto-electronic layer. A laser source may be formed integrally with the emitting element and disposed on the side of the opto-electronic layer remote from the emitting surface.Other References
Field of SearchCombined with a heterojunction involving a III-V compoundWith means for increasing light absorption (e.g., redirection of unabsorbed light) Strained layer superlattice RADIANT ENERGY GENERATION AND SOURCES Photoionization type Reflector Light conversion Ray generating or control With magnetic focus DISCHARGE DEVICES HAVING A THERMIONIC OR EMISSIVE CATHODE Reflector | |
