Process for low-temperature surface layer oxidation of a semiconductor substrate
Method of selectively forming an insulation layer
Chemically enhanced thermal oxidation and nitridation of silicon and products thereof
Method for enhancing nitridation and oxidation growth by introducing pulsed NF3
Method for fabricating hybrid oxides for thinner gate devices
Oxidation of silicon nitride in semiconductor devices Patent #: 5434109
ApplicationNo. 587104 filed on 01/10/1996
US Classes:427/255.4, Base supplied constituent257/E21.279, On silicon body (EPO)257/E21.285, Of silicon (EPO)427/239, Metal base427/241, Metal coating427/242, RUMBLING OR TUMBLING427/243, FORAMINOUS PRODUCT PRODUCED427/309, Inorganic base427/314, Heating or drying pretreatment427/553, Low energy electromagnetic radiation (e.g., microwave, radio wave, IR, UV, visible, actinic, laser, etc.)427/595Electromagnetic or particulate radiation utilized (e.g., IR, UV, X-ray, gamma ray, actinic, microwave, radio wave, atomic particle; i.e., alpha ray, beta ray, electron, etc.)
ExaminersPrimary: King, Roy V.
Attorney, Agent or Firm
International ClassH01L 021/02
AbstractA method of forming a layer of oxide on a surface of a wafer is disclosed, in which the wafer surface is heated at a first temperature and a first pressure during a first period of time in a first ambient gas comprising nitrogen and oxygen species at a first concentration, and the wafer surface is heated at a second temperature and a second pressure during a second period of time in a second ambient gas comprising ozone and oxygen at a second concentration. The oxide structure formed thereby is also disclosed.
Field of SearchBase supplied constituent
Low energy electromagnetic radiation (e.g., microwave, radio wave, IR, UV, visible, actinic, laser, etc.)
Electromagnetic or particulate radiation utilized (e.g., IR, UV, X-ray, gamma ray, actinic, microwave, radio wave, atomic particle; i.e., alpha ray, beta ray, electron, etc.)
Heating or drying pretreatment