Method of forming high-integrity ultrathin oxides
January 10, 2016. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesProcess for low-temperature surface layer oxidation of a semiconductor substrate Method of selectively forming an insulation layer Chemically enhanced thermal oxidation and nitridation of silicon and products thereof Method for enhancing nitridation and oxidation growth by introducing pulsed NF3 Method for fabricating hybrid oxides for thinner gate devices Oxidation of silicon nitride in semiconductor devices Patent #: 5434109 InventorsAssigneeApplicationNo. 587104 filed on 01/10/1996US Classes:427/255.4, Base supplied constituent257/E21.279, On silicon body (EPO)257/E21.285, Of silicon (EPO)427/239, Metal base427/241, Metal coating427/242, RUMBLING OR TUMBLING427/243, FORAMINOUS PRODUCT PRODUCED427/309, Inorganic base427/314, Heating or drying pretreatment427/553, Low energy electromagnetic radiation (e.g., microwave, radio wave, IR, UV, visible, actinic, laser, etc.)427/595Electromagnetic or particulate radiation utilized (e.g., IR, UV, X-ray, gamma ray, actinic, microwave, radio wave, atomic particle; i.e., alpha ray, beta ray, electron, etc.)ExaminersPrimary: King, Roy V.Attorney, Agent or FirmInternational ClassH01L 021/02AbstractA method of forming a layer of oxide on a surface of a wafer is disclosed, in which the wafer surface is heated at a first temperature and a first pressure during a first period of time in a first ambient gas comprising nitrogen and oxygen species at a first concentration, and the wafer surface is heated at a second temperature and a second pressure during a second period of time in a second ambient gas comprising ozone and oxygen at a second concentration. The oxide structure formed thereby is also disclosed.Other References
Field of SearchBase supplied constituentInorganic base Low energy electromagnetic radiation (e.g., microwave, radio wave, IR, UV, visible, actinic, laser, etc.) Electromagnetic or particulate radiation utilized (e.g., IR, UV, X-ray, gamma ray, actinic, microwave, radio wave, atomic particle; i.e., alpha ray, beta ray, electron, etc.) Heating or drying pretreatment | |
