Combined emissivity and radiance measurement for the determination of the temperature of a radiant object
April 14, 2015. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3392282 Laser radiometer Temperature measuring apparatus Pyrometer #2 Cooling rate determination apparatus for laser material processing Emissivity correction apparatus and method Method and apparatus for real-time wafer temperature measurement using infrared pyrometry in advanced lamp-heated rapid thermal processors Method for measuring surface temperature of semiconductor wafer substrate, and heat-treating apparatus Apparatus and method for compensating for errors in temperature measurement of semiconductor wafers during rapid thermal processing Method and apparatus to simultaneously measure emissivities and thermodynamic temperatures of remote objects InventorsApplicationNo. 363143 filed on 12/23/1994US Classes:374/9, EMISSIVITY DETERMINATION250/339.04, Including temperature determining means250/340, Methods374/126, Having emissivity compensating or specified radiating surface374/128, Having significant signal handling circuitry (e.g., linearizing, emissivity compensation)374/130Optical system structure (e.g., lens)ExaminersPrimary: Gutierrez, DiegoAttorney, Agent or FirmForeign Patent References
International ClassesG01J 005/08G01J 005/62 G01N 025/00 AbstractA system and method of measurement of emissivity and radiance of a wafer in a rapid thermal processing chamber enables determination of wafer temperature and control of temperature of the wafer. Mirrors enclose the chamber and reflect radiation from lamps within the chamber to heat the workpiece of interest. One or more viewing ports are provided in one of the mirrors to allow for the egress of radiant energy emitted by the wafer. The wavelength of the exiting radiation is selected by an optical filter having a passband which passes radiation at wavelengths emitted by the wafer while excluding radiation emitted by heating lamps. A chopper having surface regions differing in their reflectivity and transmissivity is positioned along an optical path of radiation propagating through the one or more ports, this resulting in a pulsation of detected radiation. The ratio of the detected intensities of the radiation pulses is used to determine wafer reflectance based on reflectivity and transmissivity of the reflective portion of the chopper. The maximum intensity of radiation is also taken as a measure of radiance. The reflectance is employed to calculate the emissivity, and the emissivity in combination with the radiance are employed to calculate the wafer temperature.Other References
Field of SearchEMISSIVITY DETERMINATIONHaving emissivity compensating or specified radiating surface Having significant frequency limitation or relationship (e.g., peak, ratio) Having significant signal handling circuitry (e.g., linearizing, emissivity compensation) Optical system structure (e.g., lens) Including temperature determining means Methods | |
