Led array fabrication process with improved unformity
Patent 5733689 Issued on March 31, 1998. Estimated Expiration Date: 
March 6, 2016. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
March 6, 2016. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3730766 3745428 Luminescent semiconductor display device including gate control electrodes Semiconductor luminescent display apparatus Photodiode having enhanced long wavelength response Semiconductor laser with facet protection film of selected reflectivity Light-emitting diode having a surface electrode of a tree-like form Patent #: 5309001 InventorsAssigneeApplicationNo. 611410 filed on 03/06/1996US Classes:430/5, Radiation mask257/E27.121, In a repetitive configuration (EPO)430/313With formation of resist image, and etching of substrate or material depositionExaminersPrimary: Rosasco, S.Attorney, Agent or FirmForeign Patent References
International ClassG03F 009/00Foreign Application Priority Data1993-10-20 JPAbstractA method of fabricating an LED array includes (a) forming a first insulating film composed of aluminum oxide on a semiconductor substrate of a first conductive type; (b) patterning the first insulating film by photolithography to form a plurality of first windows; (c) diffusing an impurity of a second conductive type through the plurality of first windows into the first insulating film, thereby forming a plurality of diffusion regions of the second conductive type below the plurality of first windows; (d) forming a second insulating film on the first insulating film and the plurality of first windows; (e) patterning the second insulating film by photolithography to remove the second insulating film from the plurality of first windows, using an etchant that does not etch the first insulating film; (f) forming a metal film on the second insulating film and the plurality of first windows; and (g) patterning the metal film by photolithography to form a plurality of electrodes which make electrical contact with respective diffusion regions.Other References
|
| ||||||||||||||
