U.S. patents available from 1976 to present.
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Microelectromechanical structure and process of making same

Patent 5717631 Issued on February 10, 1998. Estimated Expiration Date: Icon_subject July 25, 2015. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

Scanning tunneling microscope
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Memory device with dual cantilever means
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Integrated micromechanical piezoelectric motor
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Process for producing multilayer interconnection for semiconductor device with interlayer mechanical stress prevention and insulating layers
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Method of dry etching in semiconductor device processing
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Microvibratory memory device
Patent #: 5216631
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Inventor: Sliwa, Jr.

Methods of fabricating integrated, aligned tunneling tip pairs
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Integrated circuit micro-fabrication using dry lithographic processes
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Issued on: 05/10/1994
Inventor: Ehrlich

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Inventors

Assignee

Application

No. 507676 filed on 07/25/1995

US Classes:

365/174, Semiconductive369/126, Electrical modification or sensing of storage medium (e.g., capacitive, resistive, electrostatic charge)369/127Mechanical modification or sensing of storage medium

Examiners

Primary: Nguyen, Viet Q.

Attorney, Agent or Firm

Foreign Patent References

  • 0 363 550 A1 EP. 04/12/1990
  • 0 452 852 A2 EP. 10/12/1991
  • 0 452 852 A3 EP. 10/12/1991
  • 0 472 342 A2 EP. 02/12/1992
  • 0 518 283 A2 EP. 12/12/1992
  • 0 518 283 A3 EP. 12/12/1992
  • 0 530 427 A1 EP. 03/12/1993
  • 4115103 JP. 04/12/1992
  • 4205828 JP. 07/12/1992
  • 7021598 JP. 01/12/1995
  • WO 96/11472 A3 WO. 04/12/1996
  • WO 96/11472 A2 WO. 04/12/1996

International Class

H01L 021/44

Abstract

A microelectromechanical device is comprised of a cantilevered beam positioned above, and free to move relative to, a substrate. The beam may carry a plurality of conductors which are insulated from one another. One or more tips is positioned on the beam with each tip being in electrical contact with one of the conductors. A memory device may be constructed by providing an array of such cantilevered beams proximate to a layer of media. Devices for positioning the beam in x and y directions perpendicular to each other and parallel to the layer of media and in a z direction perpendicular to the media are provided. A control circuit generates control signals input to the positioning devices for positioning the tips according to x, y, and z coordinates. A read/write circuit which is in electrical communication with the conductors of the beam, provide signals to the tips to cause the tips to write those signals to the layer of media in a write mode and to read previously written signals sensed by the tips in a read mode. A fabrication method is also disclosed.

Other References

  • O. Watanuki et al., Small Magnet Patterns Written With A Scanning Tunneling Microscope, IEEE Transactions On Magnetics, vol. 27, No. 6, Nov. 1991
  • P. N. Louskinovich et al., Nanoelectronics Based on Scanning Tunneling Microscopy, ISSCC 92/Session 8/Engineering Technologies/Paper 8.7
  • T. R. Albrecht et al., Nanometer-Scale Hole Formation on Graphite Using a Scanning Tunneling Microscope, Appl. Phys. Lett. 55(17).23 Oct. 198
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