On-chip Peltier cooling devices on a micromachined membrane structure
June 27, 2016. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesSilver, thallium, copper and tellurium-based thermoelectrical semiconductive thermoelectric material, preparation and application to thermoelectric converters Method of manufacturing thermopile infrared detector Grain boundary junction devices using high Tc superconductors Thermoelectric module Superconducting apparatus having dew-preventable Peltier-effect element integrated therewith Thermoelectric module having reduced spacing between semiconductor elements Patent #: 5515238 InventorsApplicationNo. 671477 filed on 06/27/1996US Classes:257/467, Temperature257/419, With thinned central active portion of semiconductor surrounded by thick insensitive portion (e.g. diaphragm type strain gauge)257/468, Semiconductor device operated at cryogenic temperature257/930THERMOELECTRIC (E.G., PELTIER EFFECT) COOLINGExaminersPrimary: Jackson, JeromeAttorney, Agent or FirmForeign Patent References
International ClassesH01L 027/16H01L 035/28 AbstractThis invention provides a Peltier cooling device generally useful in cooling electronic devices, especially those which are formed of high Tc superconducting materials. The Peltier device of the invention is formed on a micromachined membrane structure to assure good thermal isolation and to intimately integrate the cooling device with the electronic device it is to cool.The membrane is formed by selective, controlled etching of a bulk substrate of a material such as silicon. The Peltier device is formed by selectively implanting or depositing appropriate dopants to form n-doped and p-doped segments on the membrane with a junction between the differently doped segments at the approximate mid-point of the membrane.Other References
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