Method of manufacturing a compound semiconductor thin film for a photoelectric or solar cell device

Patent 5714391 Issued on February 3, 1998. Estimated Expiration Date:

May 16, 2016. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Abstract Claims Description Full Text

Patent References

Process for the preparation of thin films of cadmium sulfide and precursor solutions of cadmium ammonia thiocyanate complex useful therein
Patent #: 4360542
Issued on: 11/23/1982
Inventor: Loeffler , et al.

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Inventor: Compaan

Inventors

Assignee

Matsushita Electric Industrial Co., Ltd.

Application

No. 648544 filed on 05/16/1996

US Classes:

438/99, HAVING ORGANIC SEMICONDUCTIVE COMPONENT136/244, Panel or array136/260, Cadmium containing136/264, Selenium or tellurium containing136/265, Copper, lead, or zinc containing257/E31.007, Comprising only heterojunction including Group I-III-VI compound (e.g., CdS/CuInSe 2 heterojunction) (EPO)427/74, Photoelectric427/226, HEAT DECOMPOSITION OF APPLIED COATING OR BASE MATERIAL427/255.33, Zinc (Zn), cadmium (Cd), or mercury (Hg), containing427/255.35Germanium (Ge), tin (Sn), or lead (Pb) containing

Examiners

Primary: Weisstuch, Aaron

Attorney, Agent or Firm

Ratner & Prestia

Foreign Patent References

56-28386 JP 07/12/1981

International Class

H01L 031/18

Foreign Application Priority Data

1995-05-17 JP

Abstract

This invention relates to a manufacturing method of a compound semiconductor thin film derived from a metal sulfide produced by thermal decomposition of a sulfur-containing metal organic compound, the compound containing at least one functional group having at least one metal atom selected from the group consisting of copper, zinc, cadmium, mercury, and lead, and the functional group also containing at least one sulfur atom. Since the obtained metal sulfides are of high-purity and dense, they can be utilized in various photoelectric devices. Particularly, the photoelectric conversion efficiency of a CdS/CdTe system thin film compound semiconductor solar cell can be improved remarkably by employing a layer made of a CdS thin film as a window of the solar cell.

Other References

Pande et al., "Electrophoretically Deposited CdTe Films and CdS-CdTe Devices", 13th European Photovoltaic Solar Energy Conference and Exhibition; Nice, France, Oct. 23, 1995-Oct. 27, 1995
Kessler et al., "Characterization of High Vacuum Evaporated CdTe/CdS Layers and Solar Cells", 13th European Photovoltaic Solar Energy Conference and Exhibition; Nice, France Oct. 23, 1995-Oct. 27, 1995
Chu et al., "Recent Progress in Thin-film Cadmium Telluride Solar Cells", Progress in Photovoltaics: Research and Applications, vol. 1, pp. 31-42 (1993