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US Patent 5714391 - Method of manufacturing a compound semiconductor thin film for a photoelectric or solar cell device
US Patent Issued on February 3, 1998
Estimated Patent Expiration Date:
May 16, 2016Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
Estimated Patent Expiration Date:
May 16, 2016Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.AbstractThis invention relates to a manufacturing method of a compound semiconductor thin film derived from a metal sulfide produced by thermal decomposition of a sulfur-containing metal organic compound, the compound containing at least one functional group having at least one metal atom selected from the group consisting of copper, zinc, cadmium, mercury, and lead, and the functional group also containing at least one sulfur atom. Since the obtained metal sulfides are of high-purity and dense, they can be utilized in various photoelectric devices. Particularly, the photoelectric conversion efficiency of a CdS/CdTe system thin film compound semiconductor solar cell can be improved remarkably by employing a layer made of a CdS thin film as a window of the solar cell.Other References
| Inventors
AssigneeApplicationNo. 648544 filed on 05/16/1996US Classes:438/99, HAVING ORGANIC SEMICONDUCTIVE COMPONENT136/244, Panel or array136/260, Cadmium containing136/264, Selenium or tellurium containing136/265, Copper, lead, or zinc containing257/E31.007, Comprising only heterojunction including Group I-III-VI compound (e.g., CdS/CuInSe 2 heterojunction) (EPO)427/74, Photoelectric427/226, HEAT DECOMPOSITION OF APPLIED COATING OR BASE MATERIAL427/255.33, Zinc (Zn), cadmium (Cd), or mercury (Hg), containing427/255.35Germanium (Ge), tin (Sn), or lead (Pb) containingField of Search136/260, Cadmium containing136/264, Selenium or tellurium containing136/265, Copper, lead, or zinc containing257/184, Light responsive structure427/74, Photoelectric427/226, HEAT DECOMPOSITION OF APPLIED COATING OR BASE MATERIAL427/248.1, COATING BY VAPOR, GAS, OR SMOKE427/372.2Heating or drying (e.g., polymerizing, vulcanizing, curing, etc.)ExaminersPrimary: Weisstuch, AaronAttorney, Agent or FirmUS Patent References4360542, Process for the preparation of thin films of cadmium sulfide and precursor solutions of cadmium ammonia thiocyanate complex useful thereinIssued on: 11/23/1982 Inventor: Loeffler , et al.4611091, CuInSe2 thin film solar cell with thin CdS and transparent window layer Issued on: 09/09/1986 Inventor: Choudary , et al.4734381, Method of making a thin film cadmium telluride solar cell Issued on: 03/29/1988 Inventor: Mitchell4975299, Vapor deposition process for depositing an organo-metallic compound layer on a substrate Issued on: 12/04/1990 Inventor: Mir, et al.5304499, Methods of making pn CdTe/CdS thin film solar cells Issued on: 04/19/1994 Inventor: Bonnet, et al.5393675Process for RF sputtering of cadmium telluride photovoltaic cell Issued on: 02/28/1995 Inventor: Compaan Foreign Patent References
International ClassH01L 031/18Foreign Application Priority Data1995-05-17 JP |
