Method and equipment for growing thin films
October 2, 2016. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3730696 Method for producing compound thin films Apparatus for chemical vapor deposition Radiation heated reactor for chemical vapor deposition on substrates RF Heating coil construction for stack of susceptors Apparatus for performing growth of compound thin films Method for performing growth of compound thin films Chemical vapor deposition reactor for silicon epitaxial processes Film forming apparatus Apparatus for atomic layer epitaxial growth InventorsAssigneeApplicationNo. 682703 filed on 10/02/1996US Classes:118/719, Multizone chamber118/715, GAS OR VAPOR DEPOSITION118/725Substrate heaterExaminersPrimary: Breneman, R. BruceAssistant: Lund, Jeffrie R. Attorney, Agent or FirmForeign Patent References
International ClassC23C 016/00Foreign Application Priority Data1994-11-28 FIAbstractThe invention relates to equipment for growing a thin film onto a substrate. The equipment suited to implement the invention comprises a reaction space having a reaction chamber therein into which a substrate is placed and is subjected to alternately repeated surface reactions of at least two vapor-phase reactants for the purpose of forming a thin film. The equipment further comprises recesses/openings communicating with the reaction space to form gas inflow and outflow channels. The reactants are fed in the form of vapor-phase pulses repeatedly and alternately into the reaction space through the inflow channels, each reactant separately from its own source. The vapor-phase reactants are brought to react with the surface of the substrate for the purpose of forming a solid-state thin film compound on said substrate. The gaseous reaction products and possible excess reactants are removed in gas phase from the reaction space via the outflow channels.Other References
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