Scanning photoinduced current analyzer capable of detecting photoinduced current in nonbiased specimen
Patent 5708371 Issued on January 13, 1998. Estimated Expiration Date: 
July 18, 2015. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
July 18, 2015. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesLaser probing for solid-state device Test analysis apparatus and analysis method for semiconductor wafer using OBIC analysis Patent #: 5493236 InventorApplicationNo. 503567 filed on 07/18/1995US Classes:324/752Using light probeExaminersPrimary: Nguyen, Viet Q.Attorney, Agent or FirmInternational ClassG01R 031/26AbstractA sample to be measured having a semiconductor integrated circuit having interconnection lines is set on a scanning photoinduced current analyzer with one end of the interconnection line connected to a ground and the other end connected through a current amplifier to the ground. When a laser beam falls on part having a comparatively low thermal conductivity, such as a part having a void, of the interconnection line while the interconnection line is scanned with the laser beam, temperature distribution in the interconnection line changes at the part. The change in temperature distribution produces spontaneous thermoelectromotive force by the Seebeck effect to induce a current. The current amplifier amplifies the induced current, and then an image date converter converts the amplified current into image information in synchronism with the scanning operation of the laser beam. Since the photoinduced current can be measured without supplying a bias current to the sample to be measured, a current image corresponding to the photoinduced current can be formed to determine the position of a void even if the sample to be measured has a high resistance.Other References
Field of SearchBeam of atomic particlesMISCELLANEOUS PLURAL, AUTOMATICALLY SEQUENTIAL TESTS Using light probe Test of semiconductor device Field effect transistor COLOR IMAGE PROCESSING Inspection of semiconductor device or printed circuit board TEST OR CALIBRATION STRUCTURE ORGANIC SEMICONDUCTOR MATERIAL Of electronic circuit chip or board With light detector (e.g., photocell) With registration indicia (e.g., scale) | |
