U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Method of forming bond pad structure for the via plug process

Patent 5700735 Issued on December 23, 1997. Estimated Expiration Date: Icon_subject August 22, 2016. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

Method for making a planar multi-layer metal bonding pad
Patent #: 5149674
Issued on: 09/22/1992
Inventor: Freeman, Jr., et al.

Structure and method for corrosion and stress-resistant interconnecting metallurgy
Patent #: 5266522
Issued on: 11/30/1993
Inventor: DiGiacomo, et al.

Semiconductor bond pad structure and method Patent #: 5403777
Issued on: 04/04/1995
Inventor: Bryant, et al.

Inventors

Application

No. 703918 filed on 08/22/1996

US Classes:

438/612, Forming solder contact or bonding pad257/E23.02, Bonding areas, e.g., pads (EPO)438/622, Multiple metal levels, separated by insulating layer (i.e., multiple level metallization)438/637, With formation of opening (i.e., viahole) in insulative layer438/672Plug formation (i.e., in viahole)

Examiners

Primary: Quach, T. N.

Attorney, Agent or Firm

International Class

H01L 021/60

Abstract

A bond pad structure and method of forming the bond pad structure which provides for reliable interconnections between the bond pad structure and the next level of circuit integration. The bond pad structure uses three metal pads separated by layers of dielectric. Via plugs are formed between the first and second metal pads and between the second and third metal pads. The via plugs are formed in a diamond shape with respect to the metal pads. The metal pads are squares with the same orientation. The periphery of the via plugs forms a square rotated 45° with respect to the square metal pads.

Other References

  • Wolf, S., Silicon Processing for the VLSI Era, vol. 2, Lattice Press, 1990, pp. 127-131, 189-199, 199
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