Method for making a planar multi-layer metal bonding pad
Structure and method for corrosion and stress-resistant interconnecting metallurgy
Semiconductor bond pad structure and method Patent #: 5403777
ApplicationNo. 703918 filed on 08/22/1996
US Classes:438/612, Forming solder contact or bonding pad257/E23.02, Bonding areas, e.g., pads (EPO)438/622, Multiple metal levels, separated by insulating layer (i.e., multiple level metallization)438/637, With formation of opening (i.e., viahole) in insulative layer438/672Plug formation (i.e., in viahole)
ExaminersPrimary: Quach, T. N.
Attorney, Agent or Firm
International ClassH01L 021/60
AbstractA bond pad structure and method of forming the bond pad structure which provides for reliable interconnections between the bond pad structure and the next level of circuit integration. The bond pad structure uses three metal pads separated by layers of dielectric. Via plugs are formed between the first and second metal pads and between the second and third metal pads. The via plugs are formed in a diamond shape with respect to the metal pads. The metal pads are squares with the same orientation. The periphery of the via plugs forms a square rotated 45° with respect to the square metal pads.