Lanthanide/phosphorus precursor compositions for MOCVD of lanthanide/phosphorus oxide films
Patent 5698022 Issued on December 16, 1997. Estimated Expiration Date: 
August 14, 2016. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
August 14, 2016. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesChemical vapor deposition of Group IB metals Chemical vapor deposition of group IIIB metals Chemical vapor deposition of group IIA metals and precursors therefor Chemical vapor deposition of mixed metal oxide coatings Chemical vapor deposition of transistion metals Metal complex compounds Chemical vapor deposition process employing metal pentadienyl complexes Patent #: 5352488 InventorsAssigneeApplicationNo. 696478 filed on 08/14/1996US Classes:106/287.18, Heavy metal compound containing427/226, HEAT DECOMPOSITION OF APPLIED COATING OR BASE MATERIAL427/248.1, COATING BY VAPOR, GAS, OR SMOKE427/255.19, Metal oxide containing coating556/19, Carbon bonded directly to the phosphorus556/21, Exactly three carbons bonded directly to the phosphorus (e.g., triphenylphosphines, etc.)556/22, And carbon bonded directly to the heavy metal556/24Exactly four chalcogens bonded directly to the phosphorus (e.g., phosphates, orthophosphates, etc.)ExaminersPrimary: Brunsman, DavidAttorney, Agent or FirmInternational ClassesC23C 016/00C07F 005/00 AbstractA precursor composition useful for vapor deposition formation of lanthanide metal/phosphorus oxide films, comprising a precursor compound selected from the group consisting of: (i) adducts of the formula MA3 (L)x ; (ii) phosphido complexes of the formulae M(PR3)3 or M(PR3)3 Lx ; and (iii) disubstituted phosphate complexes of the formulae A2 M(O2 P(OR)2), AM(O2 P(OR)2)2, and M(O2 P(OR)2)3, wherein: x is from 1 to 5, A=Cp or ଲ-diketonate, Cp=cyclopentadienyl, methylcyclopentadienyl, or TMS-cyclopentadienyl, R=C1 -C8 alkyl, and L=a phosphorus-containing ligand selected from the group consisting of phosphine, phosphine oxide, phosphite, phosphate, and 1,2-bis(dimethoxyphosphoryl)benzene, subject to the provisos that: when x is 2 or greater, each L may be the same as or different from the other L; and when the precursor compound is a ଲ-diketonate compound of formula (i), L is not phosphate or phosphine oxide. The precursor composition may be employed for forming a lanthanide metal/phosphorus oxide film on a substrate, by depositing a lanthanide metal/phosphorus material on the substrate from the lanthanide metal/phosphorus precursor composition in vaporized form, and incorporating oxygen in the lanthanide metal/phosphorus material to form the lanthanide metal/phosphorus oxide film on the substrate.Other References
Field of SearchHeavy metal compound containingCarbon bonded directly to the phosphorus Exactly three carbons bonded directly to the phosphorus (e.g., triphenylphosphines, etc.) And carbon bonded directly to the heavy metal Exactly four chalcogens bonded directly to the phosphorus (e.g., phosphates, orthophosphates, etc.) HEAT DECOMPOSITION OF APPLIED COATING OR BASE MATERIAL COATING BY VAPOR, GAS, OR SMOKE |
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