Semiconductor device
Patent 5696386 Issued on December 9, 1997. Estimated Expiration Date: 
December 9, 2014. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
December 9, 2014. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesCrystallized silicon-on-insulator nonvolatile memory device Hybrid substrate Low temperature crystallization and pattering of amorphous silicon films Low temperature crystallization and patterning of amorphous silicon films on electrically insulating substrates Semiconductor device and method for forming the same Patent #: 5485019 InventorAssigneeApplicationNo. 193748 filed on 02/09/1994US Classes:257/57, Field effect device in amorphous semiconductor material257/59, In array having structure for use as imager or display, or with transparent electrode257/347, Single crystal semiconductor layer on insulating substrate (SOI)257/506, Including dielectric isolation means257/E21.134, Using a coherent energy beam, e.g., laser or electron beam (EPO)257/E21.413, Lateral single gate single channel transistor with noninverted structure, i.e., channel layer is formed before gate (EPO)257/E21.703Substrate is semiconductor body (EPO)ExaminersPrimary: Crane, Sara W.Assistant: Potter, Roy Attorney, Agent or FirmForeign Patent References
International ClassH01L 029/04Foreign Application Priority Data1993-02-10 JPAbstractA method relates to fabrication of semiconductor devices such as TFTs on an insulating substrate. After forming a coating consisting mainly of aluminum nitride, semiconductor devices such as TFTs or semiconductor integrated circuits comprising said semiconductor devices are built directly or indirectly on the coating to form e.g. an active matrix liquid crystal display. A coating consisting mainly of silicon oxide may be formed on the coating consisting mainly of aluminum nitride and under said semiconductor devices or said semiconductor integrated circuits.Other References
Field of SearchMolybdenum, tungsten, or titanium or their silicidesSingle crystal semiconductor layer on insulating substrate (SOI) Including dielectric isolation means Diamond or silicon carbide Field effect device in amorphous semiconductor material In array having structure for use as imager or display, or with transparent electrode | |
