Growth of doped semiconductor monolayers
Patent 5693139 Issued on December 2, 1997. Estimated Expiration Date: 
December 2, 2014. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
December 2, 2014. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.InventorsAssigneeApplicationNo. 077119 filed on 06/15/1993US Classes:117/89, Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing)117/93, With significant flow manipulation or condition, other than merely specifying the components or their sequence or both117/102, With significant flow manipulation or condition, other than merely specifying the components or their sequence or both117/105, Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing)117/953, {B,Al,Ga,In,Tl}{P,As,Sb,Bi} compound containing, except intermetallics thereof (i.e., except {Al,Ga,In,Tl}{Sb,Bi}) {C30B 29/40}117/954, Gallium arsenide containing (e.g., GaAlAs, GaAs) {C30B 29/42}117/956, {Zn,Cd,Hg}{S,Se,Te} compound containing {C30B 29/46}257/E21.09, Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (EPO)257/E21.11, Doping the epitaxial deposit (EPO)257/E21.123, Substrate is crystalline semiconductor material, e.g., lattice adaptation, heteroepitaxy (EPO)257/E21.131Selective epilaxial growth, e.g., simultaneous deposition of mono- and non-mono semiconductor material (EPO)ExaminersPrimary: Kunemund, RobertAttorney, Agent or FirmInternational ClassC30B 025/14Foreign Application Priority Data1984-07-26 JPAbstractA cycle of alternately or cyclically introducing external gases containing molecules of component elements of a compound semiconductor to be formed on a substrate is repeated while appropriately controlling the pressure, substrate temperature and gas introduction rate in a crystal growth vessel, so that a monocrystal which is dimensionally as precise as a single monolayer can grow on the substrate by making use of chemical reactions on the heated substrate surface.Doped molecular layer epitaxy of a compound semiconductor comprising individual steps of introducing and evacuating a first source gas, introducing and evacuating a second source gas, and introducing and evacuating an impurity gas which contains an impurity element. The doped impurity concentration varies almost linearly with the pressure during doping in a wide range.Other References
Field of SearchFORAMINOUS PRODUCT PRODUCED{B,Al,Ga,In,Tl}{P,As,Sb,Bi} compound containing, except intermetallics thereof (i.e., except {Al,Ga,In,Tl}{Sb,Bi}) {C30B 29/40} Gallium arsenide containing (e.g., GaAlAs, GaAs) {C30B 29/42} {Zn,Cd,Hg}{S,Se,Te} compound containing {C30B 29/46} Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing) With significant flow manipulation or condition, other than merely specifying the components or their sequence or both With significant flow manipulation or condition, other than merely specifying the components or their sequence or both Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing) | |
