Thin-film structure for chalcogenide electrical switching devices and process therefor
Electrically erasable, directly overwritable, multibit single cell memory element and arrays fabricated therefrom Patent #: 5536947
ApplicationNo. 635442 filed on 04/19/1996
US Classes:365/163, Amorphous (electrical)257/3, With means to localize region of conduction (e.g., "pore" structure)257/4, With specified electrode composition or configuration257/E45.002Bistable switching devices, e.g., Ovshinsky-effect devices (EPO)
ExaminersPrimary: Popek, Joseph A.
Attorney, Agent or Firm
International ClassG11C 011/00
AbstractAn electrically operated, directly overwritable, multibit, single-cell chalcogenide memory element with multibit storage capabilities and having at least one contact for supplying electrical input signals to set the memory element to a selected resistance value, the second contact tapering to a peak adjacent to the memory element. In this manner the tapered contact helps define the size and position of a conduction path through the memory element.