Patent References 1455116 3493431 Vapor delivery system and method Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process Structure for filtering CVD chamber process gases Patent #: 5123375 InventorAssigneeApplicationNo. 390329 filed on 02/17/1995US Classes:427/248.1, COATING BY VAPOR, GAS, OR SMOKE95/287, In series257/E21.165, Conductive layer comprising silicide (EPO)257/E21.17, By chemical means, e.g., CVD, LPCVD, PECVD, laser CVD (EPO)257/E21.171, Selective deposition (EPO)257/E21.584, Barrier, adhesion or liner layer (EPO)257/E21.586, By selective deposition of conductive material in vias, e.g., selective chemical vapor deposition on semiconductor material, plating (EPO)427/255.28, Coating formed from vaporous or gaseous phase reaction mixture (e.g., chemical vapor deposition, CVD, etc.)427/255.392, Tungsten compound containing coating (e.g., tungsten silicide, etc.)427/444PRETREATMENT, PER SE, OR POST-TREATMENT, PER SE (WITHOUT CLAIMED COATING)ExaminersPrimary: Beck, ShriveAssistant: Meeks, Timothy Attorney, Agent or FirmInternational ClassC23C 016/02AbstractA method for filtering process gases prior to said process gases being allowed to enter a CVD chamber is provided in order to ensure high purity of the process gases. In one embodiment, the process gases are filtered with a first filter located in a first section of a gas line being isolated by valves at both ends of the gas line section. Further filtering by a second filter occurs in a downstream gas line section. | |