Methods for high temperature water rinsing and drying of silicon wafers after being cleaned in hydrofluoric acid

Patent 5681397 Issued on October 28, 1997. Estimated Expiration Date:

September 12, 2015. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Abstract Claims Description Full Text

Patent References

Chemical vapor deposition of aluminum on an activated surface Patent #: 4716050
Issued on: 12/29/1987
Inventor: Green , et al.

Inventor

Li, Li

Application

No. 527339 filed on 09/12/1995

US Classes:

134/2, For metallic, siliceous, or calcareous basework, including chemical bleaching, oxidation or reduction134/3, Including acidic agent134/26, Using sequentially applied treating agents134/28, One an acid or an acid salt257/E21.228Wet cleaning only (EPO)

Examiners

Primary: Warden, Robert J.
Assistant: Markoff, Alexander

Attorney, Agent or Firm

Workman, Nydegger and Seeley

International Class

C03C 023/00

Abstract

Methods are disclosed for rinsing and drying of a silicon wafer. The methods involve cleaning the silicon wafer with hydrofluoric acid, immersing a silicon wafer in either boiling deionized water or a boiling hydrochloric acid solution, and then drawing the silicon wafer to dry from the boiling deionized water or the boiling aqueous hydrochloric acid solution. The aqueous hydrochloric acid solution preferably has a pH value of about 2.5. Oxidation of the surfaces of a silicon wafer is minimized by immersing the silicon wafer in either boiling water or a boiling aqueous hydrochloric acid solution thereby yielding a wafer having surfaces which are oxide free. A silicon wafer boiled in an aqueous hydrochloric acid solution experiences minimal surface roughening and has relatively smooth surfaces.

Other References

Nayami et al, Removal of Metallic contaminants and Native oxide Prom silicon wafer surface by pure water containing a little dissolved Oxygen Mat. Res. Soc. Symp. Proc. vol. 386, pp. 69-74, Apr. 1995
Li et al. Surface Passivation and Microroughness of (100) Silicon Etched in Aqueous Hydrogen Halide (HF, HCI HB, HI) Solutions., J. Appl. Phys., 77(3), 1 Feb. 1995, 1323-1325
Handbook of Semiconductor Wafer Cleaning Technology Edited by Werner Kern, Noyes Publications, 1993, pp. 134-13