Method of fabricating a field emission device
Patent 5675210 Issued on October 7, 1997. Estimated Expiration Date: 
July 31, 2015. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
July 31, 2015. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMethod of manufacturing a field-emission type switching device Patent #: 5217401 InventorAssigneeApplicationNo. 509461 filed on 07/31/1995US Classes:313/309, DISCHARGE DEVICES HAVING A MULTIPOINTED OR SERRATED EDGE ELECTRODE313/336, Point source cathodes445/24Display or gas panel makingExaminersPrimary: Ramsey, Kenneth J.Attorney, Agent or FirmInternational ClassH01J 009/02Foreign Application Priority Data1995-03-29 KRAbstractA method of fabricating a field emission device which can facilitate the formation of a micro-tip for emitting electrons by a field effect. The micro-tip is fabricated such that the etching rate differences among the tungsten cathode, the lower titanium adhesive layer and the upper aluminum mask, and the internal stress differences are made to be very large, and thus, tungsten micro-tip is protruded by the internal stress when the adhesive layer and the mask are instantaneously etched. Since the micro-tip size is easily adjusted, and the internal stress of tungsten and characteristics of BOE method are utilized throughout the fabricating process, the reproducibility is ensured. | |
