Method of manufacturing a field-emission type switching device Patent #: 5217401
ApplicationNo. 509461 filed on 07/31/1995
US Classes:313/309, DISCHARGE DEVICES HAVING A MULTIPOINTED OR SERRATED EDGE ELECTRODE313/336, Point source cathodes445/24Display or gas panel making
ExaminersPrimary: Ramsey, Kenneth J.
Attorney, Agent or Firm
International ClassH01J 009/02
Foreign Application Priority Data1995-03-29 KR
AbstractA method of fabricating a field emission device which can facilitate the formation of a micro-tip for emitting electrons by a field effect. The micro-tip is fabricated such that the etching rate differences among the tungsten cathode, the lower titanium adhesive layer and the upper aluminum mask, and the internal stress differences are made to be very large, and thus, tungsten micro-tip is protruded by the internal stress when the adhesive layer and the mask are instantaneously etched. Since the micro-tip size is easily adjusted, and the internal stress of tungsten and characteristics of BOE method are utilized throughout the fabricating process, the reproducibility is ensured.