Patent ReferencesCVD thin film compounds Process for making sol-gel deposited ferroelectric thin films insensitive to their substrates Chemical vapor deposition of metal oxide films from reaction product precursors Enhanced fatigue and retention in ferroelectric thin film memory capacitors by post-top electrode anneal treatment Metalorganic chemical vapor deposition of layered structure oxides Patent #: 5478610 InventorsAssigneeApplicationNo. 305536 filed on 09/14/1994US Classes:427/250, Metal coating427/255.32, Plural metal containing coating (e.g., indium oxide/tin oxide, titanium oxide/aluminum oxide, etc.)427/255.35, Germanium (Ge), tin (Sn), or lead (Pb) containing427/376.2Metal oxide- or silicon-containing coating (e.g., glazed, vitreous enamel, etc.)ExaminersPrimary: Utech, Benjamin L.Attorney, Agent or FirmInternational ClassC23C 016/00Foreign Application Priority Data1993-09-14 JPAbstractA ferroelectric thin film is produced on a substrate placed in an oxygen gas atmosphere within a reaction chamber. Evaporated source materials (organic metal compounds) are separately introduced in a predetermined sequence into the reaction chamber to produce a PZT or PLZT layer structure having an estimated stoichiometric composition. This cycle of introduction of the source materials is repeated continuously to produce a PZT or PLZT ferroelectric thin film having a predetermined number of PZT or PLZT layer structures piled on the substrate.Other References
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