U.S. patents available from 1976 to present.
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Method for ferroelectric thin film production

Patent 5674563 Issued on October 7, 1997. Estimated Expiration Date: Icon_subject October 7, 2014. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

CVD thin film compounds
Patent #: 5104690
Issued on: 04/14/1992
Inventor: Greenwald

Process for making sol-gel deposited ferroelectric thin films insensitive to their substrates
Patent #: 5198269
Issued on: 03/30/1993
Inventor: Swartz, et al.

Chemical vapor deposition of metal oxide films from reaction product precursors
Patent #: 5258204
Issued on: 11/02/1993
Inventor: Wernberg, et al.

Enhanced fatigue and retention in ferroelectric thin film memory capacitors by post-top electrode anneal treatment
Patent #: 5372859
Issued on: 12/13/1994
Inventor: Thakoor

Metalorganic chemical vapor deposition of layered structure oxides Patent #: 5478610
Issued on: 12/26/1995
Inventor: Desu, et al.

Inventors

Assignee

Application

No. 305536 filed on 09/14/1994

US Classes:

427/250, Metal coating427/255.32, Plural metal containing coating (e.g., indium oxide/tin oxide, titanium oxide/aluminum oxide, etc.)427/255.35, Germanium (Ge), tin (Sn), or lead (Pb) containing427/376.2Metal oxide- or silicon-containing coating (e.g., glazed, vitreous enamel, etc.)

Examiners

Primary: Utech, Benjamin L.

Attorney, Agent or Firm

International Class

C23C 016/00

Foreign Application Priority Data

1993-09-14 JP

Abstract

A ferroelectric thin film is produced on a substrate placed in an oxygen gas atmosphere within a reaction chamber. Evaporated source materials (organic metal compounds) are separately introduced in a predetermined sequence into the reaction chamber to produce a PZT or PLZT layer structure having an estimated stoichiometric composition. This cycle of introduction of the source materials is repeated continuously to produce a PZT or PLZT ferroelectric thin film having a predetermined number of PZT or PLZT layer structures piled on the substrate.

Other References

  • Pp. 115-117 of "Ferroelectric Thin Film Integration Techniques", published Feb. 2, 1992 by Science Forum, Japa
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