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A self defense weapon formed as a memo pad and which is easily held by a person's fingers, therefore making it possible to provide protection from a mugger and also to quickly and easily write a record or a message without failure of missing or forgetting significant information under a stressful situation.
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US Patent 5673220 - Memory material and method for its manufacture
US Patent Issued on September 30, 1997
Estimated Patent Expiration Date:
June 7, 2015Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
Estimated Patent Expiration Date:
June 7, 2015Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.AbstractA composition of materials having ferromagnetic and piezoelectric properties is disclosed. In the preferred embodiment, the composition of materials comprises a first layer of Pb.sub.(1-x-y) Cdx Fey and a second layer of Cr.sub.(1-z-w) Znz Tew where x, y, z and w are values within the ranges of 0.38ࣘxࣘ0.042, 0.08ࣘyࣘ0.094, 0.38ࣘzࣘ0.41, 0.28ࣘwࣘ0.31, and 0.25ࣘ(1-z-w)ࣘ0.32. Additionally, each of the layers contain the elements of Bi, O and S. A random-accessible, non-volatile memory built using the invented composition of materials is also disclosed. This memory provides for storing two independent bits of binary information in a single storage cell. Each cell comprises two orthogonal address lines formed on the opposite surface of a Si substrate, a composition of materials of the present invention formed over each of the address lines, and an electrode formed over each composition of materials. The data is stored electromagnetically and retrieved as a piezoelectric voltage.Other References
| InventorAssigneeApplicationNo. 487128 filed on 06/07/1995US Classes:365/157, Magnetostrictive or piezoelectric365/117, Ferroelectric365/145FerroelectricField of Search365/145, Ferroelectric365/117, Ferroelectric365/109, Photoconductive and ferroelectric501/134, Titanate, zirconate, stannate, niobate, or tantalate or oxide of titanium, zirconium, tin, niobium, or tantalum containing (e.g., dielectrics, etc.)106/287.24Carbonyl group containingExaminersPrimary: Nguyen, Viet Q.Attorney, Agent or FirmUS Patent References4059829, Multi state magnetic bubble domain cell for random access memoriesIssued on: 11/22/1977 Inventor: Kinsner , et al.4259392, Multilayer magnetic recording medium Issued on: 03/31/1981 Inventor: Suzuki4434429, Information recording member and method of fabricating the same Issued on: 02/28/1984 Inventor: Terao , et al.4579594, Inorganic composite material and process for preparing the same Issued on: 04/01/1986 Inventor: Nanao , et al.4637976, Information recording member Issued on: 01/20/1987 Inventor: Terao , et al.4642270, Magnetic recording medium Issued on: 02/10/1987 Inventor: Morita , et al.4659588, Method of producing optical recording medium Issued on: 04/21/1987 Inventor: Yamada , et al.4769311, Information recording member Issued on: 09/06/1988 Inventor: Terao , et al.4839208, Optical information recording medium Issued on: 06/13/1989 Inventor: Nakagawa , et al.4916048, Optical recording medium and method of optical recording and erasing using medium Issued on: 04/10/1990 Inventor: Yamada, et al.4935336, Optical recording medium Issued on: 06/19/1990 Inventor: Yamada, et al.4950555, Magnetic recording medium Issued on: 08/21/1990 Inventor: Michimori, et al.4954379, Information recording thin film and method for recording information Issued on: 09/04/1990 Inventor: Nishida, et al.5060191, Ferroelectric memory Issued on: 10/22/1991 Inventor: Nagasaki, ;, , , --> Nagasaki, et al.5106714, Interdispersed two-phase ferrite composite and electrographic magnetic carrier particles therefrom Issued on: 04/21/1992 Inventor: Saha, et al.5164349, Electromagnetic effect material Issued on: 11/17/1992 Inventor: Fujii, et al. 5237529, 5239504, Magnetostrictive/electrostrictive thin film memory Issued on: 08/24/1993 Inventor: Brady, et al.5271956, Method of forming ternary metal fluoride films by the decomposition of metallo-organic compounds in the presence of a fluorinating agent Issued on: 12/21/1993 Inventor: Paz-Pujalt5390142, Memory material and method for its manufacture Issued on: 02/14/1995 Inventor: Gendlin5479384, Optical storage device having a plurality of juxtaposed memory cells Issued on: 12/26/1995 Inventor: Toth, et al.5524092Multilayered ferroelectric-semiconductor memory-device Issued on: 06/04/1996 Inventor: Park International ClassH01L 043/08 |
