Patent ReferencesSolid state photo-electric converting device and solid state imaging apparatus employing it Solid state image sensor GaAs focal plane array readout Focal plane array with charge transfer gate Method for producing a hybridization of detector array and integrated circuit for readout Method for minimizing 1/f and other low frequency noise in signal processing for focal plane array detector system CMOS image sensor with pixel level A/D conversion Patent #: 5461425 InventorsAssigneeApplicationNo. 673014 filed on 07/01/1996US Classes:250/208.1, Plural photosensitive image detecting element arrays250/214LA, Light amplifier type257/E27.14, X-ray, gamma-ray, or high energy radiation imager (measuring X-, gamma- or corpuscular radiation) (EPO)348/298In charge coupled type image sensorExaminersPrimary: Le, Que T.Attorney, Agent or FirmInternational ClassH01J 040/14AbstractA solid-state focal-plane imaging system comprises an N×N array of high gain, low-noise unit cells, each unit cell being connected to a different one of photovoltaic detector diodes, one for each unit cell, interspersed in the array for ultralow level image detection and a plurality of digital counters coupled to the outputs of the unit cell by a multiplexer (either a separate counter for each unit cell or a row of N of counters time shared with N rows of digital counters). Each unit cell includes two self-biasing cascode amplifiers in cascade for a high charge-to-voltage conversion gain (>1 mV/e-) and an electronic switch to reset input capacitance to a reference potential in order to be able to discriminate detection of an incident photon by the photoelectron (e-) generated in the detector diode at the input of the first cascode amplifier in order to count incident photons individually in a digital counter connected to the output of the second cascode amplifier. Reseting the input capacitance and initiating self-biasing of the amplifiers occurs every clock cycle of an integratng period to enable ultralow light level image detection by the array of photovoltaic detector diodes under such ultralow light level conditions that the photon flux will statistically provide only a single photon at a time incident on any one detector diode during any clock cycle.Field of SearchPlural photosensitive image detecting element arraysSpecial photocell Amplifier type Logarithmic/linear signal Including detector array With particular electrode configuration Signal charge detection type (e.g., floating diffusion or floating gate non-destructive output) Photodiodes accessed by FETs With shield, filter, or lens Including atomic particle or radiant energy impinging on a semiconductor Solid-state image sensor Time delay and integration mode (TDI) Electronic shuttering Accumulation or integration time responsive to light or signal intensity In charge coupled type image sensor With excess charge removal (e.g., overflow drain) Field or frame transfer type Interline readout | |