Processing method for forming dislocation-free SOI and other materials for semiconductor use
June 15, 2015. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesPin-hole type camera Technique for forming electric field shielding layer in oxygen-implanted silicon substrate Process for forming in a silicon oxide layer a portion with vertical side walls Method of forming a defect-free semiconductor layer on insulator Process for the production of an insulating layer embedded in a semiconductor substrate by ionic implantation and semiconductor structure comprising such layer Implantation profile control with surface sputtering Method of fabricating buried insulating layers Method for measuring ions implanted into a semiconductor substrate Simox materials through energy variation 5236872 InventorsAssigneeApplicationNo. 490658 filed on 06/15/1995US Classes:438/766, Implantation of ion (e.g., to form ion amorphousized region prior to selective oxidation, reacting with substrate to form insulative region, etc.)257/E21.339, Of electrically inactive species in silicon to make buried insulating layer (EPO)438/938LATTICE STRAIN CONTROL OR UTILIZATIONExaminersPrimary: Thomas, TomAssistant: Mulpuri, S. Attorney, Agent or FirmInternational ClassH01L 021/265AbstractA method for preparing a silicon-on-insulator material having a relatively defect-free Si overlayer involves the implanting of oxygen ions within a silicon body and the interruption of the oxygen-implanting step to implant Si ions within the silicon body. The implanting of the oxygen ions develops an oxide layer beneath the surface of the silicon body, and the Si ions introduced by the Si ion-implanting step relieves strain which is developed in the Si overlayer during the implanting step without the need for any intervening annealing step. By relieving the strain in this manner, the likelihood of the formation of strain-induced defects in the Si overlayer is reduced. In addition, the method can be carried out at lower processing temperatures than have heretofore been used with SIMOX processes of the prior art. The principles of the invention can also be used to relieve negative strain which has been induced in a silicon body of relatively ordered lattice structure.Other References
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