Method of making superhard mechanical microstructures
February 24, 2015. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMethod for forming smooth self limiting and pin hole free SiC films on Si Microfabricated cantilever stylus with integrated conical tip Method for formation of an isolating oxide layer Process for preventing a native oxide from forming on the surface of a semiconductor material and integrated circuit capacitors produced thereby Multi-dimensional precision micro-actuator Method for making tapered microminiature silicon structures Formation of silicon nitride by nitridation of porous silicon Patent #: 5332697 InventorAssigneeApplicationNo. 395410 filed on 02/24/1995US Classes:430/320, Making named article216/2, ETCHING OF SEMICONDUCTOR MATERIAL TO PRODUCE AN ARTICLE HAVING A NONELECTRICAL FUNCTION216/11, FORMING OR TREATING AN ARTICLE WHOSE FINAL CONFIGURATION HAS A PROJECTION427/249.15, Silicon and carbon containing coating (e.g., silicon carbide, etc.)427/255.26, Coating formed by reaction of vaporous or gaseous mixture with a base (i.e., reactive coating of non-metal base)427/355Solid treating member or material contacts coatingExaminersPrimary: McPherson, John A.Attorney, Agent or FirmInternational ClassC23C 026/00AbstractThe forming of superhard, durable and inert mechanical microstructures, such as tips for atomic force microscopy and field emission, membranes, hinges, actuators, and sensors requires micromachining of silicon or polysilicon. The microstructures are then reacted with a hydrocarbon or ammonia gas, at a temperature in the range of 700° C. to 1100° C. and in partial vacuum conditions for several minutes. Gases such as methane, ethane, or acetylene will convert the surface layers to SiC, which is useful for its conductive properties, while ammonia gas will convert the surface layers to Si3 N4, which is useful for its insulative properties. Thus, the converted material will have improved physical, mechanical, chemical and electrical properties.Other References
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