U.S. patents available from 1976 to present.
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Semiconductor wafer cleaning system

Patent 5656097 Issued on August 12, 1997. Estimated Expiration Date: Icon_subject December 21, 2014. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

2961354

3690333

3893869

Combined ultrasonic cleaning and biocidal treatment in a single pressure vessel
Patent #: 4193818
Issued on: 03/18/1980
Inventor: Young ,   et al.

Automatic ultrasonic cleaning apparatus
Patent #: 4409999
Issued on: 10/18/1983
Inventor: Pedziwiatr

Vessel and system for treating wafers with fluids
Patent #: 4577650
Issued on: 03/25/1986
Inventor: McConnell

Apparatus for treating semiconductor wafers
Patent #: 4633893
Issued on: 01/06/1987
Inventor: McConnell ,   et al.

Apparatus for cleaning, rinsing and drying substrates
Patent #: 4736760
Issued on: 04/12/1988
Inventor: Coberly ,   et al.

Vessel and system for treating wafers with fluids
Patent #: 4738272
Issued on: 04/19/1988
Inventor: McConnell

Method of treating wafers with fluid
Patent #: 4740249
Issued on: 04/26/1988
Inventor: McConnell

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Inventors

Assignee

Application

No. 361139 filed on 12/21/1994

US Classes:

134/1, Including application of electrical radiant or wave energy to work134/2, For metallic, siliceous, or calcareous basework, including chemical bleaching, oxidation or reduction134/3, Including acidic agent134/26, Using sequentially applied treating agents134/28, One an acid or an acid salt134/34, With treating fluid motion134/41, Metal base work, acid treating257/E21.228Wet cleaning only (EPO)

Examiners

Primary: El-Arini, Zeinab

Attorney, Agent or Firm

International Classes

B08B 003/08
B08B 003/12
B08B 007/02
C23G 001/02

Abstract

Semiconductor wafers are positioned in a cleaning tank and subjected to sequential flows of one or more highly diluted cleaning solutions that are injected from the lower end of the tank and allowed to overflow at the upper end. One solution contains one part ammonium hydroxide, two parts hydrogen peroxide, and 300-600 parts deionized water together with a trace of high purity surfactant. Rinsing water is flowed through the tank after the first solution is dumped. A second solutions contains highly dilute hydrofluoric acid. A third solution is more dilute than the first solution. A fourth solution contains hydrochloric acid greatly diluted with deionized water. The cleaning tank is provided with a megasonic generator in its lower portion for selective application of megasonic energy. Quick dump valves in the tank bottom enable the solutions to be quickly dumped followed by one or more rinse steps, including a quick refill while spraying and then dumping of the rinsing water.

Other References

  • Singer, "Trends in Wafer Cleaning", Semiconductor International, Dec. 1992
  • Verhaverbeke et al., "Advanced Wet Cleaning Technology for Highly Reliable Thin Oxides", Nov. 1993
  • An article by Werner Kern, "The Evolutioin of Silicon Wafer Cleaning Technology", J. Electrochem. Soc., vol. 137, No. 6, Jun. 199
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